Samsung M393B1K70QB0-CK0 8GB vs Crucial Technology CT16G4DFD832A.C16FN 16GB

总分

Samsung M393B1K70QB0-CK0 8GB

Samsung M393B1K70QB0-CK0 8GB

总分

Crucial Technology CT16G4DFD832A.C16FN 16GB

Crucial Technology CT16G4DFD832A.C16FN 16GB

差异规格评论

差异

Samsung M393B1K70QB0-CK0 8GB

需要考虑的原因
Samsung M393B1K70QB0-CK0 8GB

报告一个错误

Crucial Technology CT16G4DFD832A.C16FN 16GB

需要考虑的原因
Crucial Technology CT16G4DFD832A.C16FN 16GB

报告一个错误

低于PassMark测试中的延时，ns

32 47

左右 -47% 更低的延时
更快的读取速度，GB/s

17.6 10.4

测试中的平均数值
更快的写入速度，GB/s

15.3 7.8

测试中的平均数值
更高的内存带宽，mbps

25600 12800

左右 2 更高的带宽

规格

完整的技术规格清单

Samsung M393B1K70QB0-CK0 8GB

Crucial Technology CT16G4DFD832A.C16FN 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

47 32
读取速度，GB/s

10.4 17.6
写入速度，GB/s

7.8 15.3
内存带宽，mbps

12800 25600

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
时序/时钟速度

9-9-9-24 / 1600 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2169 3516

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M393B1K70QB0-CK0 8GB

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Crucial Technology CT16G4DFD832A.C16FN 16GB

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Kingston 9905402-665.A00LF 4GB

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Crucial Technology CT16G4DFD832A.M16FR 16GB

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Kingmax Semiconductor KLDD48F-B8KU5 1GB

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Kingston 9905713-019.A00G 4GB

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SK Hynix HMT351R7EFR8C-RD 4GB

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Gowe Technology Co. Ltd. GSA16G4SCL196P-26 16GB

G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F5-6400J3239G16G 16GB

Corsair CMK32GX4M4A2400C14 8GB

Corsair CMK32GX4M4A2400C14 8GB

Mushkin 991679ES 996679ES 2GB

Mushkin 991679ES 996679ES 2GB

Samsung M471A2K43CB1-CRCR 16GB

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Kreton Corporation 51624xxxx68x35xxxx 2GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

Kingston XJV223-MIE-NX 16GB

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AMD R5S38G1601U2S 8GB

AMD R5S38G1601U2S 8GB

Crucial Technology CT16G4SFD824A.M16FJ 16GB

Crucial Technology CT16G4SFD824A.M16FJ 16GB