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Crucial Technology CT102464BF160B-16F 8GB
G Skill Intl F4-3600C14-16GTZRA 16GB
比较
Crucial Technology CT102464BF160B-16F 8GB vs G Skill Intl F4-3600C14-16GTZRA 16GB
总分
Crucial Technology CT102464BF160B-16F 8GB
总分
G Skill Intl F4-3600C14-16GTZRA 16GB
差异
规格
评论
差异
需要考虑的原因
Crucial Technology CT102464BF160B-16F 8GB
报告一个错误
需要考虑的原因
G Skill Intl F4-3600C14-16GTZRA 16GB
报告一个错误
低于PassMark测试中的延时,ns
27
29
左右 -7% 更低的延时
更快的读取速度,GB/s
22.7
12.8
测试中的平均数值
更快的写入速度,GB/s
14.9
9.4
测试中的平均数值
更高的内存带宽,mbps
17000
12800
左右 1.33 更高的带宽
规格
完整的技术规格清单
Crucial Technology CT102464BF160B-16F 8GB
G Skill Intl F4-3600C14-16GTZRA 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
29
27
读取速度,GB/s
12.8
22.7
写入速度,GB/s
9.4
14.9
内存带宽,mbps
12800
17000
Other
描述
PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2282
3861
Crucial Technology CT102464BF160B-16F 8GB RAM的比较
Kingston KN2M64-ETB 8GB
Kingston 9905428-123.A00LF 8GB
G Skill Intl F4-3600C14-16GTZRA 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M393B2G70BH0-CK0 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Crucial Technology CT102464BF160B-16F 8GB
G Skill Intl F4-3600C14-16GTZRA 16GB
Micron Technology 16JTF25664AZ-1G4F1 2GB
G Skill Intl F4-3000C15-4GTZB 4GB
Kingston 9905702-010.A00G 8GB
Colorful Technology Ltd BAPC08G2666D4S8 8GB
Kingston HP669238-071-HYC 4GB
Patriot Memory (PDP Systems) PSD48G266681S 8GB
Samsung M393A1G40DB0-CPB 8GB
Corsair CMR64GX4M4K3600C18 16GB
Kingston 9905403-444.A00LF 4GB
Crucial Technology BLS16G4D240FSE.16FAD 16GB
PNY Electronics PNY 2GB
SK Hynix HMAA2GU6CJR8N-XN 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
SK Hynix HMA851S6DJR6N-XN 4GB
SK Hynix HMT151R7TFR4C-H9 4GB
Hoodisk Electronics Co Ltd GKE320UD204808-2666 32GB
Corsair CMV4GX3M1B1600C11 4GB
Micron Technology AFSD416ES1P 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Hynix Semiconductor (Hyundai Electronics) HMA451U7MFR8N
Samsung M391B5673EH1-CH9 2GB
Micron Technology 16ATF4G64HZ-3G2B2 32GB
Samsung M393B2G70BH0-CK0 16GB
G Skill Intl F4-2133C15-8GFXR 8GB
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB
报告一个错误
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Bug description
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