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Crucial Technology CT102464BF160B-16F 8GB
Golden Empire CL16-16-16 D4-2800 8GB

Crucial Technology CT102464BF160B-16F 8GB vs Golden Empire CL16-16-16 D4-2800 8GB

总分
star star star star star
Crucial Technology CT102464BF160B-16F 8GB

Crucial Technology CT102464BF160B-16F 8GB

总分
star star star star star
Golden Empire CL16-16-16 D4-2800 8GB

Golden Empire CL16-16-16 D4-2800 8GB

差异 规格 评论

差异

Crucial Technology CT102464BF160B-16F 8GB 需要考虑的原因
Crucial Technology CT102464BF160B-16F 8GB
报告一个错误
Golden Empire CL16-16-16 D4-2800 8GB 需要考虑的原因
Golden Empire CL16-16-16 D4-2800 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 29
    左右 -16% 更低的延时
  • 更快的读取速度，GB/s
    15.1 left arrow 12.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.9 left arrow 9.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Crucial Technology CT102464BF160B-16F 8GB
Golden Empire CL16-16-16 D4-2800 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    29 left arrow 25
  • 读取速度，GB/s
    12.8 left arrow 15.1
  • 写入速度，GB/s
    9.4 left arrow 11.9
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2282 left arrow 2914

Crucial Technology CT102464BF160B-16F 8GB RAM的比较

Kingston KN2M64-ETB 8GB
Kingston 9905428-123.A00LF 8GB

Golden Empire CL16-16-16 D4-2800 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BL16G32C16U4B.16FE 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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最新比较

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Samsung M395T2863QZ4-CF76 1GB
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内存RAM
Crucial Technology CT102464BF160B-16F 8GB
Crucial Technology CT102464BF160B-16F 8GB
Golden Empire CL16-16-16 D4-2800 8GB
Golden Empire CL16-16-16 D4-2800 8GB
内存RAM
Crucial Technology CT51264AC800.C16FC 4GB
Crucial Technology CT51264AC800.C16FC 4GB
Tanbassh 8G 2666MHZ 8GB
Tanbassh 8G 2666MHZ 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
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Avexir Technologies Corporation DDR4-3000 CL15 4GB 4GB
内存RAM
Team Group Inc. UD5-6400 16GB
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Crucial Technology CT8G4DFS832A.C8FE 8GB
内存RAM
Crucial Technology CT51264AC800.C16FC 4GB
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G Skill Intl F4-3000C15-4GRK 4GB
内存RAM
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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Crucial Technology CT16G4DFRA266.C16FP 16GB
内存RAM