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Crucial Technology CT102464BF160B.C16 8GB
G Skill Intl F4-2666C18-8GTZR 8GB

Crucial Technology CT102464BF160B.C16 8GB vs G Skill Intl F4-2666C18-8GTZR 8GB

总分
star star star star star
Crucial Technology CT102464BF160B.C16 8GB

Crucial Technology CT102464BF160B.C16 8GB

总分
star star star star star
G Skill Intl F4-2666C18-8GTZR 8GB

G Skill Intl F4-2666C18-8GTZR 8GB

差异 规格 评论

差异

Crucial Technology CT102464BF160B.C16 8GB 需要考虑的原因
Crucial Technology CT102464BF160B.C16 8GB
报告一个错误
G Skill Intl F4-2666C18-8GTZR 8GB 需要考虑的原因
G Skill Intl F4-2666C18-8GTZR 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 44
    左右 -57% 更低的延时
  • 更快的读取速度，GB/s
    17.1 left arrow 12.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.1 left arrow 8.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
Crucial Technology CT102464BF160B.C16 8GB
G Skill Intl F4-2666C18-8GTZR 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    44 left arrow 28
  • 读取速度，GB/s
    12.6 left arrow 17.1
  • 写入速度，GB/s
    8.6 left arrow 14.1
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 9 11 13 15 17 18
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2193 left arrow 3379

Crucial Technology CT102464BF160B.C16 8GB RAM的比较

Samsung M471B1G73QH0-YK0 8GB
Apacer Technology AQD-D4U8GN26-SE 8GB

G Skill Intl F4-2666C18-8GTZR 8GB RAM的比较

STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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Apacer Technology 78.C2GFA.AF30B 8GB
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SK Hynix HMT41GU7BFR8A-PB 8GB
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内存RAM
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内存RAM
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Kingston 9905471-076.A00LF 8GB
Samsung M471A5143EB0-CPB 4GB
Samsung M471A5143EB0-CPB 4GB
内存RAM
Samsung M471B1G73QH0-YK0 8GB
Samsung M471B1G73QH0-YK0 8GB
SK Hynix GKE160UD102408-2400 16GB
SK Hynix GKE160UD102408-2400 16GB
内存RAM
G Skill Intl F5-6400J3239G16G 16GB
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内存RAM
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内存RAM
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