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Crucial Technology CT102464BF160B.C16 8GB
G Skill Intl F4-3600C18-32GTRS 32GB

Crucial Technology CT102464BF160B.C16 8GB vs G Skill Intl F4-3600C18-32GTRS 32GB

总分
star star star star star
Crucial Technology CT102464BF160B.C16 8GB

Crucial Technology CT102464BF160B.C16 8GB

总分
star star star star star
G Skill Intl F4-3600C18-32GTRS 32GB

G Skill Intl F4-3600C18-32GTRS 32GB

差异 规格 评论

差异

Crucial Technology CT102464BF160B.C16 8GB 需要考虑的原因
Crucial Technology CT102464BF160B.C16 8GB
报告一个错误
G Skill Intl F4-3600C18-32GTRS 32GB 需要考虑的原因
G Skill Intl F4-3600C18-32GTRS 32GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    31 left arrow 44
    左右 -42% 更低的延时
  • 更快的读取速度，GB/s
    17.7 left arrow 12.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    15.3 left arrow 8.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
Crucial Technology CT102464BF160B.C16 8GB
G Skill Intl F4-3600C18-32GTRS 32GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    44 left arrow 31
  • 读取速度，GB/s
    12.6 left arrow 17.7
  • 写入速度，GB/s
    8.6 left arrow 15.3
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2193 left arrow 3713

Crucial Technology CT102464BF160B.C16 8GB RAM的比较

Samsung M471B1G73QH0-YK0 8GB
Apacer Technology AQD-D4U8GN26-SE 8GB

G Skill Intl F4-3600C18-32GTRS 32GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CMT64GX4M4K3600C18 16GB
Corsair CMT64GX4M4K3600C18 16GB
内存RAM
Ramaxel Technology RMT3020EC58E9F1333 4GB
Ramaxel Technology RMT3020EC58E9F1333 4GB
Samsung M378A2G43BB3-CWE 16GB
Samsung M378A2G43BB3-CWE 16GB
内存RAM
Crucial Technology CT102464BF160B.C16 8GB
Crucial Technology CT102464BF160B.C16 8GB
G Skill Intl F4-3600C18-32GTRS 32GB
G Skill Intl F4-3600C18-32GTRS 32GB
内存RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
Kingston 9905701-098.A00G 16GB
Kingston 9905701-098.A00G 16GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Kingston 9905702-007.A00G 8GB
Kingston 9905702-007.A00G 8GB
内存RAM
Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
Kingston KHX3300C16D4/4GX 4GB
Kingston KHX3300C16D4/4GX 4GB
内存RAM
TwinMOS 8DHE3MN8-HATP 2GB
TwinMOS 8DHE3MN8-HATP 2GB
Kingston 9905678-138.A00G 8GB
Kingston 9905678-138.A00G 8GB
内存RAM
Samsung M3 78T2953EZ3-CF7 1GB
Samsung M3 78T2953EZ3-CF7 1GB
Avant Technology J642GU42J7240N4 16GB
Avant Technology J642GU42J7240N4 16GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
G Skill Intl F4-2400C15-8GTZR 8GB
G Skill Intl F4-2400C15-8GTZR 8GB
内存RAM
Micron Technology 18HTF12872AY-800F1 1GB
Micron Technology 18HTF12872AY-800F1 1GB
G Skill Intl F4-2400C15-4GRK 4GB
G Skill Intl F4-2400C15-4GRK 4GB
内存RAM
Crucial Technology CT51264AC800.C16FC 4GB
Crucial Technology CT51264AC800.C16FC 4GB
G Skill Intl F4-2666C15-4GVR 4GB
G Skill Intl F4-2666C15-4GVR 4GB
内存RAM
Corsair CMK8GX4M1E3200C16 8GB
Corsair CMK8GX4M1E3200C16 8GB
Kingston 8ATF1G64AZ-2G3A141 8GB
Kingston 8ATF1G64AZ-2G3A141 8GB
内存RAM
A-DATA Technology DOVF1B163G2G 2GB
A-DATA Technology DOVF1B163G2G 2GB
Samsung M471A2K43BB1-CTD 16GB
Samsung M471A2K43BB1-CTD 16GB
内存RAM
Corsair CMY8GX3M2A2666C10 4GB
Corsair CMY8GX3M2A2666C10 4GB
Kingston XN205T-MIE 16GB
Kingston XN205T-MIE 16GB
内存RAM