Crucial Technology CT102464BF160B.C16 8GB vs Wilk Elektronik S.A. GR2666D464L19/16G 16GB

总分

Crucial Technology CT102464BF160B.C16 8GB

Crucial Technology CT102464BF160B.C16 8GB

总分

Wilk Elektronik S.A. GR2666D464L19/16G 16GB

Wilk Elektronik S.A. GR2666D464L19/16G 16GB

差异规格评论

差异

Crucial Technology CT102464BF160B.C16 8GB

需要考虑的原因
Crucial Technology CT102464BF160B.C16 8GB

报告一个错误

Wilk Elektronik S.A. GR2666D464L19/16G 16GB

需要考虑的原因
Wilk Elektronik S.A. GR2666D464L19/16G 16GB

报告一个错误

低于PassMark测试中的延时，ns

29 44

左右 -52% 更低的延时
更快的读取速度，GB/s

16.1 12.6

测试中的平均数值
更快的写入速度，GB/s

11.5 8.6

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT102464BF160B.C16 8GB

Wilk Elektronik S.A. GR2666D464L19/16G 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

44 29
读取速度，GB/s

12.6 16.1
写入速度，GB/s

8.6 11.5
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2193 3098

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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最新比较

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Samsung M393B2G70BH0-CH9 16GB

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G Skill Intl F4-3600C14-8GTZRA 8GB

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Corsair CMV4GX3M1B1600C11 4GB

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Samsung M471A1K1KBB0-CPB 8GB

Samsung M471A1K1KBB0-CPB 8GB

Corsair VS2GB1333D4 2GB

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Netac Technology Co Ltd E40832A 8GB

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A-DATA Technology DDR3 1333G 2GB

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Hynix Semiconductor (Hyundai Electronics) HMA82GS6MFR8N-TF 16GB

Hynix Semiconductor (Hyundai Electronics) HMA82GS6MFR8N

Samsung M393B2G70BH0-CH9 16GB

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Kingston KHX3200C18D4/4G 4GB

Kingston KHX3200C18D4/4G 4GB