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Crucial Technology CT16G4DFD8266.M16FJ 16GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
比较
Crucial Technology CT16G4DFD8266.M16FJ 16GB vs Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
总分
Crucial Technology CT16G4DFD8266.M16FJ 16GB
总分
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
差异
规格
评论
差异
需要考虑的原因
Crucial Technology CT16G4DFD8266.M16FJ 16GB
报告一个错误
更快的写入速度,GB/s
13.0
12.7
测试中的平均数值
需要考虑的原因
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
报告一个错误
低于PassMark测试中的延时,ns
22
28
左右 -27% 更低的延时
更快的读取速度,GB/s
17.7
17.4
测试中的平均数值
规格
完整的技术规格清单
Crucial Technology CT16G4DFD8266.M16FJ 16GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
28
22
读取速度,GB/s
17.4
17.7
写入速度,GB/s
13.0
12.7
内存带宽,mbps
21300
21300
Other
描述
PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
3398
3075
Crucial Technology CT16G4DFD8266.M16FJ 16GB RAM的比较
Crucial Technology BLS8G4S240FSD.16FBD2 8GB
A-DATA Technology AM2P26KC8T1-BXRS 8GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB RAM的比较
Thermaltake Technology Co Ltd R019D408GX2-3200C16A 8GB
Micron Technology 18ASF2G72AZ-2G1A1 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Corsair CMT64GX4M2C3600C18 32GB
Kingston 9965516-112.A00LF 16GB
Crucial Technology BL16G36C16U4WL.M16FE 16GB
Kingston 9965525-018.A00LF 4GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16G
Kingston KHX1600C9D3/4GX 4GB
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Corsair CML16GX3M2A1600C10 8GB
Micron Technology 4ATF51264AZ-3G2J1 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N
报告一个错误
×
Bug description
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