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Crucial Technology CT25664AA800.M16FG 2GB
Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N-UH 4GB
比较
Crucial Technology CT25664AA800.M16FG 2GB vs Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N-UH 4GB
总分
Crucial Technology CT25664AA800.M16FG 2GB
总分
Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N-UH 4GB
差异
规格
评论
差异
需要考虑的原因
Crucial Technology CT25664AA800.M16FG 2GB
报告一个错误
低于PassMark测试中的延时,ns
52
122
左右 57% 更低的延时
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N-UH 4GB
报告一个错误
更快的读取速度,GB/s
9.4
4
测试中的平均数值
更快的写入速度,GB/s
5.8
2,027.0
测试中的平均数值
更高的内存带宽,mbps
19200
6400
左右 3 更高的带宽
规格
完整的技术规格清单
Crucial Technology CT25664AA800.M16FG 2GB
Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N-UH 4GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
52
122
读取速度,GB/s
4,837.1
9.4
写入速度,GB/s
2,027.0
5.8
内存带宽,mbps
6400
19200
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
5-5-5-15 / 800 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
794
1411
Crucial Technology CT25664AA800.M16FG 2GB RAM的比较
Crucial Technology CT25664AA800.M16FM 2GB
Crucial Technology CT25664AA800.M16FJ 2GB
Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N-UH 4GB RAM的比较
A-DATA Technology AD73I1C1674EV 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Hewlett-Packard 7EH74AA#ABC 8GB
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Kingston KMKYF9-HYA 8GB
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Kingston 99U5702-101.A00G 8GB
Samsung M393B2G70BH0-YK0 16GB
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Crucial Technology CT25664AA800.M16FM 2GB
Corsair CMK16GX4M4C3200C16 4GB
Kingston 99U5469-045.A00LF 4GB
Crucial Technology BLS8G4D30CESTK.8FD 8GB
报告一个错误
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Bug description
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