Crucial Technology CT25664AA800.M16FG 2GB vs V-GEN D4H4GL30A8TS5 4GB

总分

Crucial Technology CT25664AA800.M16FG 2GB

Crucial Technology CT25664AA800.M16FG 2GB

总分

V-GEN D4H4GL30A8TS5 4GB

V-GEN D4H4GL30A8TS5 4GB

差异规格评论

差异

Crucial Technology CT25664AA800.M16FG 2GB

需要考虑的原因
Crucial Technology CT25664AA800.M16FG 2GB

报告一个错误

低于PassMark测试中的延时，ns

52 90

左右 42% 更低的延时
更快的读取速度，GB/s

4 15.6

测试中的平均数值

V-GEN D4H4GL30A8TS5 4GB

需要考虑的原因
V-GEN D4H4GL30A8TS5 4GB

报告一个错误

更快的写入速度，GB/s

8.7 2,027.0

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT25664AA800.M16FG 2GB

V-GEN D4H4GL30A8TS5 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

52 90
读取速度，GB/s

4,837.1 15.6
写入速度，GB/s

2,027.0 8.7
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

794 1743

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M471A2K43CB1-CTD 16GB

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SK Hynix HMT41GU7BFR8A-PB 8GB

Corsair CMW128GX4M4D3600C18 32GB

Corsair CMW128GX4M4D3600C18 32GB

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Samsung M393B2G70BH0-CH9 16GB

Micron Technology 16GB 2133MHz DIMM 16GB

Micron Technology 16GB 2133MHz DIMM 16GB

EVGA 16G-D3-1600-MR 8GB

EVGA 16G-D3-1600-MR 8GB

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Smart Modular SF4641G8CK8IWGKSEG 8GB

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Kingston 99U5595-005.A00LF 2GB

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Hynix Semiconductor (Hyundai Electronics) GKE160UD10240