Crucial Technology CT25664AA800.M16FM 2GB vs G Skill Intl F4-3466C16-16GTZSW 16GB

总分

Crucial Technology CT25664AA800.M16FM 2GB

Crucial Technology CT25664AA800.M16FM 2GB

总分

G Skill Intl F4-3466C16-16GTZSW 16GB

G Skill Intl F4-3466C16-16GTZSW 16GB

差异规格评论

差异

Crucial Technology CT25664AA800.M16FM 2GB

需要考虑的原因
Crucial Technology CT25664AA800.M16FM 2GB

报告一个错误

更快的读取速度，GB/s

5 17.7

测试中的平均数值
更快的写入速度，GB/s

2,135.0 14.6

测试中的平均数值

G Skill Intl F4-3466C16-16GTZSW 16GB

需要考虑的原因
G Skill Intl F4-3466C16-16GTZSW 16GB

报告一个错误

低于PassMark测试中的延时，ns

27 51

左右 -89% 更低的延时
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT25664AA800.M16FM 2GB

G Skill Intl F4-3466C16-16GTZSW 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

51 27
读取速度，GB/s

5,021.4 17.7
写入速度，GB/s

2,135.0 14.6
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

855 3587

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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Ramos Technology EWB8GB681CA3-16IC 8GB

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G Skill Intl F4-3600C18-8GTRG 8GB

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Samsung M386B4G70DM0-CMA4 32GB

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Kingston KHX3200C18D4/16G 16GB

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Kreton Corporation 51624xxxx68x35xxxx 2GB

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MDT Technologies GmbH MDT 1GB DDR2-66 1GB

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PNY Electronics PNY 2GB

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Memphis Electronic D4SO1G724GI-A58SD 8GB

Memphis Electronic D4SO1G724GI-A58SD 8GB

Kingston 9965525-155.A00LF 8GB

Kingston 9965525-155.A00LF 8GB

Corsair CMK32GX4M1A2666C16 32GB

Corsair CMK32GX4M1A2666C16 32GB

SK Hynix HYMP512U64CP8-Y5 1GB

SK Hynix HYMP512U64CP8-Y5 1GB

Mushkin MRA4S320GJJM16G 16GB

Mushkin MRA4S320GJJM16G 16GB

PNY Electronics 4GBH2X02E99927-16 4GB

PNY Electronics 4GBH2X02E99927-16 4GB

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G Skill Intl F4-4266C16-8GTZR 8GB

Samsung M4 70T5663CZ3-CE6 2GB

Samsung M4 70T5663CZ3-CE6 2GB

Apacer Technology GD2.0918CT.001 4GB

Apacer Technology GD2.0918CT.001 4GB