Samsung M3 78T3354BZ0-CCC 256MB vs Kingston KHX2933C17S4/16G 16GB

总分

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

总分

Kingston KHX2933C17S4/16G 16GB

Kingston KHX2933C17S4/16G 16GB

差异规格评论

差异

Samsung M3 78T3354BZ0-CCC 256MB

需要考虑的原因
Samsung M3 78T3354BZ0-CCC 256MB

报告一个错误

更快的读取速度，GB/s

2 17

测试中的平均数值

Kingston KHX2933C17S4/16G 16GB

需要考虑的原因
Kingston KHX2933C17S4/16G 16GB

报告一个错误

低于PassMark测试中的延时，ns

30 46

左右 -53% 更低的延时
更快的写入速度，GB/s

14.9 1,519.2

测试中的平均数值
更高的内存带宽，mbps

23400 3200

左右 7.31 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T3354BZ0-CCC 256MB

Kingston KHX2933C17S4/16G 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

46 30
读取速度，GB/s

2,909.8 17.0
写入速度，GB/s

1,519.2 14.9
内存带宽，mbps

3200 23400

Other

描述

PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5 PC4-23400, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18
时序/时钟速度

3-3-3-12 / 400 MHz 19-19-19, 20-20-20, 21-21-21, 22-22-22 / 2933 MHz
排名PassMark (越多越好)

241 3429

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Absolute Latency

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最新比较

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Corsair CMW16GX4M2E3200C16 8GB

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SK Hynix HMT325S6CFR8C-H9 2GB

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V-Color Technology Inc. TA48G30S815GK 8GB

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Hexon Technology Pte Ltd HEXON 1GB

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SK Hynix HMA81GR7MFR8N-UH 8GB

SK Hynix HMA81GR7MFR8N-UH 8GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Micron Technology 4ATF51264AZ-3G2E1 4GB

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G Skill Intl F4-3200C16-16GTZ 16GB

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

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Kingston 9905403-134.A00LF 2GB

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Nanya Technology NT2GT64U8HD0BN-AD 2GB

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G Skill Intl F4-3600C17-8GTZR 8GB

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Samsung M471B5273EB0-CK0 4GB

Samsung M378A2G43MB1-CTD 16GB

Samsung M378A2G43MB1-CTD 16GB

AMD AE34G2139U2 4GB

AMD AE34G2139U2 4GB

Kingston KHX3466C19D4/16G 16GB

Kingston KHX3466C19D4/16G 16GB

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Samsung M471B5273CH0-CH9 4GB

Crucial Technology CT4G4DFS824A.C8FE 4GB

Crucial Technology CT4G4DFS824A.C8FE 4GB

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Kingston 9965516-112.A00LF 16GB

Micron Technology 16ATF2G64AZ-2G3E1 16GB

Micron Technology 16ATF2G64AZ-2G3E1 16GB