Crucial Technology CT25664BA1339.M8FK 2GB vs V-GEN D4S4GL32A16TS 4GB

总分

Crucial Technology CT25664BA1339.M8FK 2GB

Crucial Technology CT25664BA1339.M8FK 2GB

总分

V-GEN D4S4GL32A16TS 4GB

V-GEN D4S4GL32A16TS 4GB

差异规格评论

差异

Crucial Technology CT25664BA1339.M8FK 2GB

需要考虑的原因
Crucial Technology CT25664BA1339.M8FK 2GB

报告一个错误

低于PassMark测试中的延时，ns

26 62

左右 58% 更低的延时
更快的写入速度，GB/s

7.6 7.4

测试中的平均数值

V-GEN D4S4GL32A16TS 4GB

需要考虑的原因
V-GEN D4S4GL32A16TS 4GB

报告一个错误

更快的读取速度，GB/s

15.9 13.6

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT25664BA1339.M8FK 2GB

V-GEN D4S4GL32A16TS 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 62
读取速度，GB/s

13.6 15.9
写入速度，GB/s

7.6 7.4
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1916 1891

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingston 99U5474-010.A00LF 2GB

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ISD Technology Limited KD48GU880-32A160X 8GB

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Kingston 99U5403-036.A00G 4GB

Corsair CMU16GX4M2C3000C15 8GB

Corsair CMU16GX4M2C3000C15 8GB

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

Micron Technology 16ATF1G64AZ-2G1A1 8GB

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Kingston 99U5429-014.A00LF 4GB

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G Skill Intl F4-2666C19-8GVR 8GB