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Samsung M3 78T2863QZS-CF7 1GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU7MFR8N-TF 16GB

Samsung M3 78T2863QZS-CF7 1GB vs Hynix Semiconductor (Hyundai Electronics) HMA82GU7MFR8N-TF 16GB

总分
star star star star star
Samsung M3 78T2863QZS-CF7 1GB

Samsung M3 78T2863QZS-CF7 1GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMA82GU7MFR8N-TF 16GB

Hynix Semiconductor (Hyundai Electronics) HMA82GU7MFR8N-TF 16GB

差异 规格 评论

差异

Samsung M3 78T2863QZS-CF7 1GB 需要考虑的原因
Samsung M3 78T2863QZS-CF7 1GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 13.6
    测试中的平均数值
Hynix Semiconductor (Hyundai Electronics) HMA82GU7MFR8N-TF 16GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA82GU7MFR8N-TF 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    23 left arrow 69
    左右 -200% 更低的延时
  • 更快的写入速度，GB/s
    6.7 left arrow 1,857.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
Samsung M3 78T2863QZS-CF7 1GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU7MFR8N-TF 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    69 left arrow 23
  • 读取速度，GB/s
    4,217.2 left arrow 13.6
  • 写入速度，GB/s
    1,857.7 left arrow 6.7
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    668 left arrow 2339

Samsung M3 78T2863QZS-CF7 1GB RAM的比较

Samsung M3 78T2953EZ3-CE7 1GB
Kingston 99U5712-002.A00G 16GB

Hynix Semiconductor (Hyundai Electronics) HMA82GU7MFR8N-TF 16GB RAM的比较

A-DATA Technology DQVE1908 512MB
Samsung M3 93T5750CZA-CE6 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Samsung M3 78T2863QZS-CF7 1GB
Samsung M3 78T2863QZS-CF7 1GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU7MFR8N-TF 16GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU7MFR8N
内存RAM
Kingston KVR533D2N4 512MB
Kingston KVR533D2N4 512MB
Crucial Technology CT8G4SFD824A.M16FE1 8GB
Crucial Technology CT8G4SFD824A.M16FE1 8GB
内存RAM
Micron Technology 8JSF25664HZ-1G4D1 2GB
Micron Technology 8JSF25664HZ-1G4D1 2GB
Kingston 9905663-030.A00G 16GB
Kingston 9905663-030.A00G 16GB
内存RAM
Kingston 9905471-006.A01LF 4GB
Kingston 9905471-006.A01LF 4GB
Crucial Technology CT8G4DFS8266.C8FN 8GB
Crucial Technology CT8G4DFS8266.C8FN 8GB
内存RAM
Kreton Corporation 51624xxxx68x35xxxx 2GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
Gloway International Co. Ltd. TYA4U3000E16081C 8GB
Gloway International Co. Ltd. TYA4U3000E16081C 8GB
内存RAM
Avant Technology F6451U64F9333G 4GB
Avant Technology F6451U64F9333G 4GB
Kingston 99U5704-001.A00G 4GB
Kingston 99U5704-001.A00G 4GB
内存RAM
Kingston 9905471-002.A00LF 2GB
Kingston 9905471-002.A00LF 2GB
Crucial Technology CT16G4SFD8213.C16FH1 16GB
Crucial Technology CT16G4SFD8213.C16FH1 16GB
内存RAM
Kingston 99U5471-052.A00LF 8GB
Kingston 99U5471-052.A00LF 8GB
Crucial Technology BLS16G4D26BFSC.16FD 16GB
Crucial Technology BLS16G4D26BFSC.16FD 16GB
内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
Micron Technology CT4G4DFS8213.8FA11 4GB
Micron Technology CT4G4DFS8213.8FA11 4GB
内存RAM
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
SK Hynix HMAA1GU6CJR6N-XN 8GB
SK Hynix HMAA1GU6CJR6N-XN 8GB
内存RAM
Samsung M393B1G70BH0-CK0 8GB
Samsung M393B1G70BH0-CK0 8GB
Corsair CMK64GX4M4C3333C16 16GB
Corsair CMK64GX4M4C3333C16 16GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Samsung M378A5244CB0-CTD 4GB
Samsung M378A5244CB0-CTD 4GB
内存RAM
Kingston 99U5428-046.A00LF 4GB
Kingston 99U5428-046.A00LF 4GB
Corsair CMK16GX4M2A2800C16 8GB
Corsair CMK16GX4M2A2800C16 8GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
G Skill Intl F4-4800C18-8GTRG 8GB
G Skill Intl F4-4800C18-8GTRG 8GB
内存RAM