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G Skill Intl F2-9600CL6-2GBRH 2GB
Samsung M3 78T5663EH3-CF7 2GB

G Skill Intl F2-9600CL6-2GBRH 2GB vs Samsung M3 78T5663EH3-CF7 2GB

总分
star star star star star
G Skill Intl F2-9600CL6-2GBRH 2GB

G Skill Intl F2-9600CL6-2GBRH 2GB

总分
star star star star star
Samsung M3 78T5663EH3-CF7 2GB

Samsung M3 78T5663EH3-CF7 2GB

差异 规格 评论

差异

G Skill Intl F2-9600CL6-2GBRH 2GB 需要考虑的原因
G Skill Intl F2-9600CL6-2GBRH 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    43 left arrow 65
    左右 34% 更低的延时
  • 更快的读取速度，GB/s
    6 left arrow 4
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,960.1 left arrow 2,451.8
    测试中的平均数值
Samsung M3 78T5663EH3-CF7 2GB 需要考虑的原因
Samsung M3 78T5663EH3-CF7 2GB
报告一个错误

规格

完整的技术规格清单
G Skill Intl F2-9600CL6-2GBRH 2GB
Samsung M3 78T5663EH3-CF7 2GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR2
  • PassMark中的延时，ns
    43 left arrow 65
  • 读取速度，GB/s
    6,465.2 left arrow 4,605.9
  • 写入速度，GB/s
    2,960.1 left arrow 2,451.8
  • 内存带宽，mbps
    6400 left arrow 6400
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 left arrow PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 5-5-5-15 / 800 MHz
  • 排名PassMark (越多越好)
    1087 left arrow 878

G Skill Intl F2-9600CL6-2GBRH 2GB RAM的比较

Shenzhen Xingmem Technology Corp 16GB

Samsung M3 78T5663EH3-CF7 2GB RAM的比较

Samsung M3 78T5663FB3-CF7 2GB
Samsung M378T5663DZ3-CF7 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 9965525-023.A00LF 4GB
Kingston 9965525-023.A00LF 4GB
Crucial Technology BLE8G4D40BEEAK.M8FE1 8GB
Crucial Technology BLE8G4D40BEEAK.M8FE1 8GB
内存RAM
G Skill Intl F2-9600CL6-2GBRH 2GB
G Skill Intl F2-9600CL6-2GBRH 2GB
Samsung M3 78T5663EH3-CF7 2GB
Samsung M3 78T5663EH3-CF7 2GB
内存RAM
Smart Modular SG564568FG8N6KF-Z2 2GB
Smart Modular SG564568FG8N6KF-Z2 2GB
Crucial Technology CT4G4SFS8266.C8FE 4GB
Crucial Technology CT4G4SFS8266.C8FE 4GB
内存RAM
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Avexir Technologies Corporation DDR4-3000 CL16 8GB 8GB
Avexir Technologies Corporation DDR4-3000 CL16 8GB 8GB
内存RAM
Samsung M378B5773DH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB
Kingston 9965600-012.A01G 16GB
Kingston 9965600-012.A01G 16GB
内存RAM
Elpida EBJ81UG8BBU0-GN-F 8GB
Elpida EBJ81UG8BBU0-GN-F 8GB
Samsung M378A1K43DB2-CVF 8GB
Samsung M378A1K43DB2-CVF 8GB
内存RAM
Kingston 9905403-156.A00LF 2GB
Kingston 9905403-156.A00LF 2GB
Crucial Technology BLS8G4D26BFSTK.8FD 8GB
Crucial Technology BLS8G4D26BFSTK.8FD 8GB
内存RAM
Kingston 9965525-018.A00LF 4GB
Kingston 9965525-018.A00LF 4GB
AMD R7416G2133U2S 16GB
AMD R7416G2133U2S 16GB
内存RAM
AMD R5316G1609U2K 8GB
AMD R5316G1609U2K 8GB
Corsair CMK32GX4M4B3200C16 8GB
Corsair CMK32GX4M4B3200C16 8GB
内存RAM
AMD R538G1601U2S-UO 8GB
AMD R538G1601U2S-UO 8GB
Kingston KHYXPX-MIE 8GB
Kingston KHYXPX-MIE 8GB
内存RAM
Micron Technology 18HTF12872AY-800F1 1GB
Micron Technology 18HTF12872AY-800F1 1GB
Avexir Technologies Corporation DDR4-3600 CL17 8GB 8GB
Avexir Technologies Corporation DDR4-3600 CL17 8GB 8GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
SK Hynix V-GeN D4H8GL26A8TX5 8GB
SK Hynix V-GeN D4H8GL26A8TX5 8GB
内存RAM
Kreton Corporation 51624xxxx68x35xxxx 2GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
Samsung SF4641G8CKHI6DFSDS 8GB
Samsung SF4641G8CKHI6DFSDS 8GB
内存RAM
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Micron Technology 8ATF51264HZ-2G1A2 4GB
Micron Technology 8ATF51264HZ-2G1A2 4GB
内存RAM