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Crucial Technology CT25664BA160B.C16F 2GB
Apacer Technology GD2.1527WE.001 8GB
比较
Crucial Technology CT25664BA160B.C16F 2GB vs Apacer Technology GD2.1527WE.001 8GB
总分
Crucial Technology CT25664BA160B.C16F 2GB
总分
Apacer Technology GD2.1527WE.001 8GB
差异
规格
评论
差异
需要考虑的原因
Crucial Technology CT25664BA160B.C16F 2GB
报告一个错误
需要考虑的原因
Apacer Technology GD2.1527WE.001 8GB
报告一个错误
低于PassMark测试中的延时,ns
27
29
左右 -7% 更低的延时
更快的读取速度,GB/s
17.3
14.3
测试中的平均数值
更快的写入速度,GB/s
13.5
10.1
测试中的平均数值
更高的内存带宽,mbps
17000
12800
左右 1.33 更高的带宽
规格
完整的技术规格清单
Crucial Technology CT25664BA160B.C16F 2GB
Apacer Technology GD2.1527WE.001 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
29
27
读取速度,GB/s
14.3
17.3
写入速度,GB/s
10.1
13.5
内存带宽,mbps
12800
17000
Other
描述
PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2227
3440
Crucial Technology CT25664BA160B.C16F 2GB RAM的比较
Samsung M378B5773DH0-CH9 2GB
Heoriady M378B5273DH0-CK0 4GB
Apacer Technology GD2.1527WE.001 8GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
A-DATA Technology DOVF1B163G2G 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
G Skill Intl F5-5600J4040C16G 16GB
Crucial Technology BLS16G4D26BFST.16FD 16GB
Essencore Limited KD48GU88C-26N1600 8GB
Corsair CMK32GX4M4B3200C16 8GB
A-DATA Technology DQVE1908 512MB
Crucial Technology BLS8G4D240FSB.16FBD 8GB
Samsung M395T2863QZ4-CF76 1GB
Panram International Corporation W4U2400PS-4G 4GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Corsair CMW32GX4M4C3000C15 8GB
G Skill Intl F3-2800C12-8GTXDG 8GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3000 8GB
SK Hynix HMT41GS6BFR8A-PB 8GB
Crucial Technology BL16G30C15U4R.M16FE1 16GB
Elpida EBJ21UE8BDF0-DJ-F 2GB
A-DATA Technology AD4S3200316G22-BHYD 16GB
Corsair CM3X8GA2400C11Y2R 8GB
Avexir Technologies Corporation DDR4-2666 CL15 4GB 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
A-DATA Technology AO2P24HCST2-BTVS 16GB
Kingston 99U5584-007.A00LF 4GB
Neo Forza NMUD480E82-3600 8GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
V-Color Technology Inc. TL48G32S8KSRGB16 8GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
EXCELERAM EKBLACK4163016AD 8GB
报告一个错误
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