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Crucial Technology CT25664BA160B.C16F 2GB
G Skill Intl F4-3200C16-8GTZKY 8GB

Crucial Technology CT25664BA160B.C16F 2GB vs G Skill Intl F4-3200C16-8GTZKY 8GB

总分
star star star star star
Crucial Technology CT25664BA160B.C16F 2GB

Crucial Technology CT25664BA160B.C16F 2GB

总分
star star star star star
G Skill Intl F4-3200C16-8GTZKY 8GB

G Skill Intl F4-3200C16-8GTZKY 8GB

差异 规格 评论

差异

Crucial Technology CT25664BA160B.C16F 2GB 需要考虑的原因
Crucial Technology CT25664BA160B.C16F 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 32
    左右 9% 更低的延时
G Skill Intl F4-3200C16-8GTZKY 8GB 需要考虑的原因
G Skill Intl F4-3200C16-8GTZKY 8GB
报告一个错误
  • 更快的读取速度，GB/s
    16.3 left arrow 14.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.7 left arrow 10.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Crucial Technology CT25664BA160B.C16F 2GB
G Skill Intl F4-3200C16-8GTZKY 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    29 left arrow 32
  • 读取速度，GB/s
    14.3 left arrow 16.3
  • 写入速度，GB/s
    10.1 left arrow 12.7
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2227 left arrow 2999

Crucial Technology CT25664BA160B.C16F 2GB RAM的比较

Samsung M378B5773DH0-CH9 2GB
Heoriady M378B5273DH0-CK0 4GB

G Skill Intl F4-3200C16-8GTZKY 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Crucial Technology CT25664BA160B.C16F 2GB
Crucial Technology CT25664BA160B.C16F 2GB
G Skill Intl F4-3200C16-8GTZKY 8GB
G Skill Intl F4-3200C16-8GTZKY 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kingston 9905743-043.A00G 16GB
Kingston 9905743-043.A00G 16GB
内存RAM
Samsung M386B4G70DM0-CMA4 32GB
Samsung M386B4G70DM0-CMA4 32GB
G Skill Intl F4-3000C16-8GTRS 8GB
G Skill Intl F4-3000C16-8GTRS 8GB
内存RAM
Ramos Technology EWB8GB681CA3-16IC 8GB
Ramos Technology EWB8GB681CA3-16IC 8GB
SK Hynix HMA84GR7MFR4N-TF 32GB
SK Hynix HMA84GR7MFR4N-TF 32GB
内存RAM
Kingston 9905403-134.A00LF 2GB
Kingston 9905403-134.A00LF 2GB
Kingmax Semiconductor GLLF62F-DA---------- 4GB
Kingmax Semiconductor GLLF62F-DA---------- 4GB
内存RAM
takeMS International AG TMS2GB264D082-805G 2GB
takeMS International AG TMS2GB264D082-805G 2GB
Kingston 9905625-097.A00G 16GB
Kingston 9905625-097.A00G 16GB
内存RAM
Samsung DDR3 8GB 1600MHz 8GB
Samsung DDR3 8GB 1600MHz 8GB
Mushkin MR[ABC]4U320GJJM32G 32GB
Mushkin MR[ABC]4U320GJJM32G 32GB
内存RAM
Kingston KVR16N11/8-SP 8GB
Kingston KVR16N11/8-SP 8GB
Kingston 9905711-002.A00G 4GB
Kingston 9905711-002.A00G 4GB
内存RAM
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT51264BA1339.C16F 4GB
SK Hynix HMAA2GU6AJR8N-XN 16GB
SK Hynix HMAA2GU6AJR8N-XN 16GB
内存RAM
Samsung M378A1K43EB2-CWE 8GB
Samsung M378A1K43EB2-CWE 8GB
V-GEN D4H4GS24A8 4GB
V-GEN D4H4GS24A8 4GB
内存RAM
Corsair CMZ16GX3M2A2400C10 8GB
Corsair CMZ16GX3M2A2400C10 8GB
Crucial Technology BLS16G4D240FSE.16FAD 16GB
Crucial Technology BLS16G4D240FSE.16FAD 16GB
内存RAM
Apacer Technology 78.01G86.9H50C 1GB
Apacer Technology 78.01G86.9H50C 1GB
G Skill Intl F4-3200C15-16GTZSK 16GB
G Skill Intl F4-3200C15-16GTZSK 16GB
内存RAM
Kingston KHX1600C9D3/8G 8GB
Kingston KHX1600C9D3/8G 8GB
Crucial Technology CT16G4DFD824A.C16FDR 16GB
Crucial Technology CT16G4DFD824A.C16FDR 16GB
内存RAM
Kingston 99U5469-045.A00LF 4GB
Kingston 99U5469-045.A00LF 4GB
Kingston CBD24D4S7S8ME-8 8GB
Kingston CBD24D4S7S8ME-8 8GB
内存RAM