Crucial Technology CT25664BA160B.C16F 2GB

Gloway International Co. Ltd. TYP4U3200E16082C 8GB

Crucial Technology CT25664BA160B.C16F 2GB vs Gloway International Co. Ltd. TYP4U3200E16082C 8GB

总分

Crucial Technology CT25664BA160B.C16F 2GB

Crucial Technology CT25664BA160B.C16F 2GB

总分

Gloway International Co. Ltd. TYP4U3200E16082C 8GB

Gloway International Co. Ltd. TYP4U3200E16082C 8GB

差异规格评论

差异

Crucial Technology CT25664BA160B.C16F 2GB

需要考虑的原因
Crucial Technology CT25664BA160B.C16F 2GB

报告一个错误

低于PassMark测试中的延时，ns

29 39

左右 26% 更低的延时

Gloway International Co. Ltd. TYP4U3200E16082C 8GB

需要考虑的原因
Gloway International Co. Ltd. TYP4U3200E16082C 8GB

报告一个错误

更快的读取速度，GB/s

17.5 14.3

测试中的平均数值
更快的写入速度，GB/s

10.6 10.1

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT25664BA160B.C16F 2GB

Gloway International Co. Ltd. TYP4U3200E16082C 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

29 39
读取速度，GB/s

14.3 17.5
写入速度，GB/s

10.1 10.6
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2227 2600

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology CT25664BA160B.C16F 2GB

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Kingston KF552C40-16 16GB

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Samsung M471A5244CB0-CTD 4GB

Samsung M471A5244CB0-CTD 4GB

Heoriady M471A1K43CB1-CTD 8GB

Heoriady M471A1K43CB1-CTD 8GB

PNY Electronics 4GBH2X02E99927-16 4GB

PNY Electronics 4GBH2X02E99927-16 4GB

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Smart Modular SMU4TDC3C0K0464SCG 4GB