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Crucial Technology CT25664BA160B.C16F 2GB
Kingston 9905744-066.A00G 32GB

Crucial Technology CT25664BA160B.C16F 2GB vs Kingston 9905744-066.A00G 32GB

总分
star star star star star
Crucial Technology CT25664BA160B.C16F 2GB

Crucial Technology CT25664BA160B.C16F 2GB

总分
star star star star star
Kingston 9905744-066.A00G 32GB

Kingston 9905744-066.A00G 32GB

差异 规格 评论

差异

Crucial Technology CT25664BA160B.C16F 2GB 需要考虑的原因
Crucial Technology CT25664BA160B.C16F 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 47
    左右 38% 更低的延时
Kingston 9905744-066.A00G 32GB 需要考虑的原因
Kingston 9905744-066.A00G 32GB
报告一个错误
  • 更快的读取速度，GB/s
    17.8 left arrow 14.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.7 left arrow 10.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 12800
    左右 2 更高的带宽

规格

完整的技术规格清单
Crucial Technology CT25664BA160B.C16F 2GB
Kingston 9905744-066.A00G 32GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    29 left arrow 47
  • 读取速度，GB/s
    14.3 left arrow 17.8
  • 写入速度，GB/s
    10.1 left arrow 14.7
  • 内存带宽，mbps
    12800 left arrow 25600
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    2227 left arrow 3099

Crucial Technology CT25664BA160B.C16F 2GB RAM的比较

Samsung M378B5773DH0-CH9 2GB
Heoriady M378B5273DH0-CK0 4GB

Kingston 9905744-066.A00G 32GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Crucial Technology CT25664BA160B.C16F 2GB
Crucial Technology CT25664BA160B.C16F 2GB
Kingston 9905744-066.A00G 32GB
Kingston 9905744-066.A00G 32GB
内存RAM
Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
Corsair CMR32GX4M2F3600C18 16GB
Corsair CMR32GX4M2F3600C18 16GB
内存RAM
Patriot Memory (PDP Systems) PSD22G8002 2GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Hynix Semiconductor (Hyundai Electronics) HMA851S6AFR6N-UH 4GB
Hynix Semiconductor (Hyundai Electronics) HMA851S6AFR6N
内存RAM
Apacer Technology 78.A1GC6.9H10C 2GB
Apacer Technology 78.A1GC6.9H10C 2GB
Apacer Technology 78.C1GMM.DFW0C 8GB
Apacer Technology 78.C1GMM.DFW0C 8GB
内存RAM
Kingston 9905403-090.A01LF 4GB
Kingston 9905403-090.A01LF 4GB
Mushkin 99[2/7/4]199F 8GB
Mushkin 99[2/7/4]199F 8GB
内存RAM
TwinMOS 8DHE3MN8-HATP 2GB
TwinMOS 8DHE3MN8-HATP 2GB
Crucial Technology C 8GB
Crucial Technology C 8GB
内存RAM
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Mushkin MR[ABC]4U266GHHF8G 8GB
Mushkin MR[ABC]4U266GHHF8G 8GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
Apacer Technology 78.BAGN8.40C0B 4GB
Apacer Technology 78.BAGN8.40C0B 4GB
内存RAM
G Skill Intl F3-1333C9-4GIS 4GB
G Skill Intl F3-1333C9-4GIS 4GB
DSL Memory D4SS1G082SH21A-B 16GB
DSL Memory D4SS1G082SH21A-B 16GB
内存RAM
Kingston 9905471-006.A01LF 4GB
Kingston 9905471-006.A01LF 4GB
Chun Well Technology Holding Limited MD4U1636181DCW 16GB
Chun Well Technology Holding Limited MD4U1636181DCW 16G
内存RAM
Unifosa Corporation HU564404EP0200 4GB
Unifosa Corporation HU564404EP0200 4GB
Ramaxel Technology RMUA5200MR78HAF-3200 8GB
Ramaxel Technology RMUA5200MR78HAF-3200 8GB
内存RAM
Smart Modular SH564128FH8NZQNSCG 4GB
Smart Modular SH564128FH8NZQNSCG 4GB
Crucial Technology CT16G4DFD8266.C16FE 16GB
Crucial Technology CT16G4DFD8266.C16FE 16GB
内存RAM
Kingston 9905403-090.A01LF 4GB
Kingston 9905403-090.A01LF 4GB
Kingston 9905622-075.A00G 8GB
Kingston 9905622-075.A00G 8GB
内存RAM
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F5-6400J3239G16G 16GB
Transcend Information JM2666HSB-16G 16GB
Transcend Information JM2666HSB-16G 16GB
内存RAM