Crucial Technology CT25664BA160B.C16F 2GB vs Micron Technology 8ATF2G64HZ-2G3A1 16GB

总分

Crucial Technology CT25664BA160B.C16F 2GB

Crucial Technology CT25664BA160B.C16F 2GB

总分

Micron Technology 8ATF2G64HZ-2G3A1 16GB

Micron Technology 8ATF2G64HZ-2G3A1 16GB

差异规格评论

差异

Crucial Technology CT25664BA160B.C16F 2GB

需要考虑的原因
Crucial Technology CT25664BA160B.C16F 2GB

报告一个错误

低于PassMark测试中的延时，ns

29 32

左右 9% 更低的延时
更快的读取速度，GB/s

14.3 14.1

测试中的平均数值
更快的写入速度，GB/s

10.1 9.7

测试中的平均数值

Micron Technology 8ATF2G64HZ-2G3A1 16GB

需要考虑的原因
Micron Technology 8ATF2G64HZ-2G3A1 16GB

报告一个错误

更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT25664BA160B.C16F 2GB

Micron Technology 8ATF2G64HZ-2G3A1 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

29 32
读取速度，GB/s

14.3 14.1
写入速度，GB/s

10.1 9.7
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2227 2434

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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最新比较

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Kingston ACR512X64D3S13C9G 4GB

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Kingston KHX2666C13D4/4GX 4GB

Kingston KHX2666C13D4/4GX 4GB

SK Hynix HMT451U7BFR8C-RD 4GB

SK Hynix HMT451U7BFR8C-RD 4GB

Kingston KHX2133C14S4/16G 16GB

Kingston KHX2133C14S4/16G 16GB

Ramaxel Technology RMN1740HC48D8F667A 2GB

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Samsung M393B1G70BH0-YK0 8GB

Samsung M393B1G70BH0-YK0 8GB

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G Skill Intl F4-3333C16-4GRKD 4GB

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

Corsair CMK16GX4M2A2800C16 8GB

Corsair CMK16GX4M2A2800C16 8GB