Crucial Technology CT25664BA160B.C16F 2GB vs Mushkin MR[A/B]280HHHH16G 16GB

总分

Crucial Technology CT25664BA160B.C16F 2GB

Crucial Technology CT25664BA160B.C16F 2GB

总分

Mushkin MR[A/B]280HHHH16G 16GB

Mushkin MR[A/B]280HHHH16G 16GB

差异规格评论

差异

Crucial Technology CT25664BA160B.C16F 2GB

需要考虑的原因
Crucial Technology CT25664BA160B.C16F 2GB

报告一个错误

Mushkin MR[A/B]280HHHH16G 16GB

需要考虑的原因
Mushkin MR[A/B]280HHHH16G 16GB

报告一个错误

低于PassMark测试中的延时，ns

22 29

左右 -32% 更低的延时
更快的读取速度，GB/s

18.4 14.3

测试中的平均数值
更快的写入速度，GB/s

14.4 10.1

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT25664BA160B.C16F 2GB

Mushkin MR[A/B]280HHHH16G 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

29 22
读取速度，GB/s

14.3 18.4
写入速度，GB/s

10.1 14.4
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2227 3394

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Peak Electronics 256X64M-67E 2GB

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Samsung M393A4K40BB0-CPB 32GB

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Panram International Corporation PUD42133C138G4NJK 8GB

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TwinMOS 8DHE3MN8-HATP 2GB

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Kingston 9905403-090.A01LF 4GB

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Gold Key Technology Co Ltd GKE800UD102408-2666 8GB

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Avant Technology W641GU42J9266NC 8GB

Avant Technology W641GU42J9266NC 8GB

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Samsung M395T2863QZ4-CF76 1GB

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Crucial Technology CT16G4SFD824A.M16FA 16GB

Kingston KF552C40-16 16GB

Kingston KF552C40-16 16GB

SK Hynix HMA451R7MFR8N-TFTD 4GB

SK Hynix HMA451R7MFR8N-TFTD 4GB

takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

Crucial Technology CT4G4SFS8213.C8FHP 4GB

Crucial Technology CT4G4SFS8213.C8FHP 4GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

Asgard VMA45UG-MEC1U2AW2 8GB

Asgard VMA45UG-MEC1U2AW2 8GB