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Crucial Technology CT25664BA160B.C16F 2GB
Netac Technology Co Ltd EKBLUE4162417AD 8GB

Crucial Technology CT25664BA160B.C16F 2GB vs Netac Technology Co Ltd EKBLUE4162417AD 8GB

总分
star star star star star
Crucial Technology CT25664BA160B.C16F 2GB

Crucial Technology CT25664BA160B.C16F 2GB

总分
star star star star star
Netac Technology Co Ltd EKBLUE4162417AD 8GB

Netac Technology Co Ltd EKBLUE4162417AD 8GB

差异 规格 评论

差异

Crucial Technology CT25664BA160B.C16F 2GB 需要考虑的原因
Crucial Technology CT25664BA160B.C16F 2GB
报告一个错误
Netac Technology Co Ltd EKBLUE4162417AD 8GB 需要考虑的原因
Netac Technology Co Ltd EKBLUE4162417AD 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    24 left arrow 29
    左右 -21% 更低的延时
  • 更快的读取速度，GB/s
    16.8 left arrow 14.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.0 left arrow 10.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Crucial Technology CT25664BA160B.C16F 2GB
Netac Technology Co Ltd EKBLUE4162417AD 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    29 left arrow 24
  • 读取速度，GB/s
    14.3 left arrow 16.8
  • 写入速度，GB/s
    10.1 left arrow 12.0
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2227 left arrow 2946

Crucial Technology CT25664BA160B.C16F 2GB RAM的比较

Samsung M378B5773DH0-CH9 2GB
Heoriady M378B5273DH0-CK0 4GB

Netac Technology Co Ltd EKBLUE4162417AD 8GB RAM的比较

Samsung M393B1K70CH0-CH9 8GB
Samsung M378A1G43EB1-CPB 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Crucial Technology CT25664BA160B.C16F 2GB
Crucial Technology CT25664BA160B.C16F 2GB
Netac Technology Co Ltd EKBLUE4162417AD 8GB
Netac Technology Co Ltd EKBLUE4162417AD 8GB
内存RAM
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Panram International Corporation W4N2666PS-8G 8GB
Panram International Corporation W4N2666PS-8G 8GB
内存RAM
Samsung M393B1G70BH0-YK0 8GB
Samsung M393B1G70BH0-YK0 8GB
Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR4N-UH 16GB
Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR4N
内存RAM
Samsung M378A1K43EB2-CWE 8GB
Samsung M378A1K43EB2-CWE 8GB
Kingmax Semiconductor GLLH22F-18KII5------ 16GB
Kingmax Semiconductor GLLH22F-18KII5------ 16GB
内存RAM
Nanya Technology M2Y2G64TU8HD5B-AC 2GB
Nanya Technology M2Y2G64TU8HD5B-AC 2GB
Apacer Technology 78.C1GMM.DFW0C 8GB
Apacer Technology 78.C1GMM.DFW0C 8GB
内存RAM
Samsung M378A1G43DB0-CPB 8GB
Samsung M378A1G43DB0-CPB 8GB
Kingston KM0VW4-MID 8GB
Kingston KM0VW4-MID 8GB
内存RAM
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Crucial Technology BL16G32C16U4W.16FE 16GB
Crucial Technology BL16G32C16U4W.16FE 16GB
内存RAM
G Skill Intl F3-2133C9-4GAB 4GB
G Skill Intl F3-2133C9-4GAB 4GB
Corsair CMT32GX4M4C3600C18 8GB
Corsair CMT32GX4M4C3600C18 8GB
内存RAM
AMD R538G1601U2S 8GB
AMD R538G1601U2S 8GB
Mushkin MRA4S320GJJM32G 32GB
Mushkin MRA4S320GJJM32G 32GB
内存RAM
Kingston 99U5403-036.A00G 4GB
Kingston 99U5403-036.A00G 4GB
Crucial Technology CT16G4SFD8213.M16FB 16GB
Crucial Technology CT16G4SFD8213.M16FB 16GB
内存RAM
Kingston 9965662-016.A00G 16GB
Kingston 9965662-016.A00G 16GB
Corsair CMD8GX4M2B4000C19 4GB
Corsair CMD8GX4M2B4000C19 4GB
内存RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
G Skill Intl F4-3600C14-8GTZN 8GB
G Skill Intl F4-3600C14-8GTZN 8GB
内存RAM
Micron Technology 16JTF25664AZ-1G4F1 2GB
Micron Technology 16JTF25664AZ-1G4F1 2GB
Ramaxel Technology RMSA3310MJ86H9F-3200 4GB
Ramaxel Technology RMSA3310MJ86H9F-3200 4GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
Kingston KTP9W1-MIE 16GB
Kingston KTP9W1-MIE 16GB
内存RAM