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Crucial Technology CT25664BA160B.C16F 2GB
Samsung M378B5273DH0-CK0 4GB
比较
Crucial Technology CT25664BA160B.C16F 2GB vs Samsung M378B5273DH0-CK0 4GB
总分
Crucial Technology CT25664BA160B.C16F 2GB
总分
Samsung M378B5273DH0-CK0 4GB
差异
规格
评论
差异
需要考虑的原因
Crucial Technology CT25664BA160B.C16F 2GB
报告一个错误
低于PassMark测试中的延时,ns
29
41
左右 29% 更低的延时
更快的读取速度,GB/s
14.3
14
测试中的平均数值
更快的写入速度,GB/s
10.1
9.0
测试中的平均数值
需要考虑的原因
Samsung M378B5273DH0-CK0 4GB
报告一个错误
规格
完整的技术规格清单
Crucial Technology CT25664BA160B.C16F 2GB
Samsung M378B5273DH0-CK0 4GB
主要特点
存储器类型
DDR3
DDR3
PassMark中的延时,ns
29
41
读取速度,GB/s
14.3
14.0
写入速度,GB/s
10.1
9.0
内存带宽,mbps
12800
12800
Other
描述
PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
时序/时钟速度
9-9-9-24 / 1600 MHz
9-9-9-24 / 1600 MHz
排名PassMark (越多越好)
2227
2204
Crucial Technology CT25664BA160B.C16F 2GB RAM的比较
Samsung M378B5773DH0-CH9 2GB
Heoriady M378B5273DH0-CK0 4GB
Samsung M378B5273DH0-CK0 4GB RAM的比较
Crucial Technology CT51264BA160B.M16F 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Crucial Technology CT16G4DFD8266.M16FH 16GB
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Crucial Technology CT8G4SFD824AC16FBD1 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CT8G4SFS832A.C8FE 8GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Corsair CMK16GX4M2Z2666C16 8GB
SK Hynix HMT451S6DFR8A-PB 4GB
AMD R538G1609U1K 4GB
Kingston KF552C40-16 16GB
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Team Group Inc. TEAMGROUP-UD4-4500 8GB
A-DATA Technology VDQVE1B16 2GB
Kingston 9905713-008.A00G 4GB
Kingston 9905403-011.A03LF 2GB
G Skill Intl F4-4266C19-4GTZ 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Micron Technology 18ASF1G72PDZ-2G6E1 8GB
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