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Crucial Technology CT25664BA160B.C16F 2GB
Thermaltake Technology Co Ltd R017D408GX2-3600C18A 8GB
比较
Crucial Technology CT25664BA160B.C16F 2GB vs Thermaltake Technology Co Ltd R017D408GX2-3600C18A 8GB
总分
Crucial Technology CT25664BA160B.C16F 2GB
总分
Thermaltake Technology Co Ltd R017D408GX2-3600C18A 8GB
差异
规格
评论
差异
需要考虑的原因
Crucial Technology CT25664BA160B.C16F 2GB
报告一个错误
低于PassMark测试中的延时,ns
29
34
左右 15% 更低的延时
需要考虑的原因
Thermaltake Technology Co Ltd R017D408GX2-3600C18A 8GB
报告一个错误
更快的读取速度,GB/s
20.3
14.3
测试中的平均数值
更快的写入速度,GB/s
13.4
10.1
测试中的平均数值
更高的内存带宽,mbps
21300
12800
左右 1.66 更高的带宽
规格
完整的技术规格清单
Crucial Technology CT25664BA160B.C16F 2GB
Thermaltake Technology Co Ltd R017D408GX2-3600C18A 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
29
34
读取速度,GB/s
14.3
20.3
写入速度,GB/s
10.1
13.4
内存带宽,mbps
12800
21300
Other
描述
PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
9-9-9-24 / 1600 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
2227
3343
Crucial Technology CT25664BA160B.C16F 2GB RAM的比较
Samsung M378B5773DH0-CH9 2GB
Heoriady M378B5273DH0-CK0 4GB
Thermaltake Technology Co Ltd R017D408GX2-3600C18A 8GB RAM的比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Unifosa Corporation HU564404EP0200 4GB
G Skill Intl F4-4266C16-8GTZR 8GB
A-DATA Technology DQKD1A08 1GB
G Skill Intl F4-3600C19-16GVRB 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CT4G4DFS8213.C8FAR11 4GB
Samsung 1600 CL10 Series 8GB
Corsair CMK16GX4M2B2800C14 8GB
Corsair CMY8GX3M2A2666C10 4GB
G Skill Intl F4-3000C16-16GSXFB 16GB
Nanya Technology NT512T64U88B0BY-3C 512MB
Wilk Elektronik S.A. IRP4000D4V64L18S/8G 8GB
A-DATA Technology DQKD1A08 1GB
Hynix Semiconductor (Hyundai Electronics) HMA82GS6CJR8N
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
Gloway International Co. Ltd. TYP4U3000E16082C 8GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Hynix Semiconductor (Hyundai Electronics) HMA41GS6AFR8N
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Mushkin MR[A/B]4U320LLLM8G 8GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Smart Modular SF464128CKHIWDFSEG 4GB
Kingston 99U5584-004.A00LF 4GB
Crucial Technology CT8G4DFS832A.C8FJ 8GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Essencore Limited KD48GU881-26N190D 8GB
TwinMOS 8DPT5MK8-TATP 2GB
Crucial Technology BLS8G4D32AESCK.M8FE1 8GB
报告一个错误
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Bug description
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