RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Nanya Technology NT512T64U88B0BY-3C 512MB
Wilk Elektronik S.A. IRP4000D4V64L18S/8G 8GB
比较
Nanya Technology NT512T64U88B0BY-3C 512MB vs Wilk Elektronik S.A. IRP4000D4V64L18S/8G 8GB
总分
Nanya Technology NT512T64U88B0BY-3C 512MB
总分
Wilk Elektronik S.A. IRP4000D4V64L18S/8G 8GB
差异
规格
评论
差异
需要考虑的原因
Nanya Technology NT512T64U88B0BY-3C 512MB
报告一个错误
更快的读取速度,GB/s
2
19.1
测试中的平均数值
需要考虑的原因
Wilk Elektronik S.A. IRP4000D4V64L18S/8G 8GB
报告一个错误
低于PassMark测试中的延时,ns
28
71
左右 -154% 更低的延时
更快的写入速度,GB/s
16.2
1,322.6
测试中的平均数值
更高的内存带宽,mbps
21300
5300
左右 4.02 更高的带宽
规格
完整的技术规格清单
Nanya Technology NT512T64U88B0BY-3C 512MB
Wilk Elektronik S.A. IRP4000D4V64L18S/8G 8GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
71
28
读取速度,GB/s
2,831.6
19.1
写入速度,GB/s
1,322.6
16.2
内存带宽,mbps
5300
21300
Other
描述
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-21300, 1.2V, CAS Supported: 13 14 15 16 17 18 19
时序/时钟速度
5-5-5-15 / 667 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
399
3562
Nanya Technology NT512T64U88B0BY-3C 512MB RAM的比较
Hynix Semiconductor (Hyundai Electronics) HYMP564U64EP8-S5 512MB
G Skill Intl F4-3200C16-16GTZSK 16GB
Wilk Elektronik S.A. IRP4000D4V64L18S/8G 8GB RAM的比较
Samsung M393B5170FH0-CK0 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Corsair CMY8GX3M2A2666C10 4GB
G Skill Intl F4-3000C16-16GSXFB 16GB
Nanya Technology NT512T64U88B0BY-3C 512MB
Wilk Elektronik S.A. IRP4000D4V64L18S/8G 8GB
A-DATA Technology DQKD1A08 1GB
Hynix Semiconductor (Hyundai Electronics) HMA82GS6CJR8N
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
Gloway International Co. Ltd. TYP4U3000E16082C 8GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Hynix Semiconductor (Hyundai Electronics) HMA41GS6AFR8N
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Mushkin MR[A/B]4U320LLLM8G 8GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Smart Modular SF464128CKHIWDFSEG 4GB
Kingston 99U5584-004.A00LF 4GB
Crucial Technology CT8G4DFS832A.C8FJ 8GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Essencore Limited KD48GU881-26N190D 8GB
TwinMOS 8DPT5MK8-TATP 2GB
Crucial Technology BLS8G4D32AESCK.M8FE1 8GB
SK Hynix HMT451U7BFR8C-RD 4GB
Micron Technology 18ASF2G72PDZ-2G6H1R 16GB
Kingston ACR512X64D3S13C9G 4GB
Wilk Elektronik S.A. GX2133D464L15S/8G 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston KHYXPX-HYJ 8GB
Ramaxel Technology RMSA3260NA78HAF-2666 8GB
Crucial Technology BL16G36C16U4W.M8FB1 16GB
报告一个错误
×
Bug description
Source link