Crucial Technology CT51264AC800.C16FC 4GB vs Corsair CMK16GX4M2A2400C14 8GB

总分

Crucial Technology CT51264AC800.C16FC 4GB

Crucial Technology CT51264AC800.C16FC 4GB

总分

Corsair CMK16GX4M2A2400C14 8GB

Corsair CMK16GX4M2A2400C14 8GB

差异规格评论

差异

Crucial Technology CT51264AC800.C16FC 4GB

需要考虑的原因
Crucial Technology CT51264AC800.C16FC 4GB

报告一个错误

更快的读取速度，GB/s

4 16.6

测试中的平均数值
更快的写入速度，GB/s

2,378.6 12.1

测试中的平均数值

Corsair CMK16GX4M2A2400C14 8GB

需要考虑的原因
Corsair CMK16GX4M2A2400C14 8GB

报告一个错误

低于PassMark测试中的延时，ns

32 62

左右 -94% 更低的延时
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT51264AC800.C16FC 4GB

Corsair CMK16GX4M2A2400C14 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

62 32
读取速度，GB/s

4,670.6 16.6
写入速度，GB/s

2,378.6 12.1
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

861 3009

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Corsair CMSX4GX3M1A1600C9 4GB

Corsair CMSX4GX3M1A1600C9 4GB

G Skill Intl F4-3733C17-4GTZ 4GB

G Skill Intl F4-3733C17-4GTZ 4GB

AMD R538G1601U2S 8GB

AMD R538G1601U2S 8GB

Micron Technology 8ATF1G64HZ-2G6J1 8GB

Micron Technology 8ATF1G64HZ-2G6J1 8GB

SK Hynix HMT325S6CFR8C-PB 2GB

SK Hynix HMT325S6CFR8C-PB 2GB

Terabyte Co Ltd RCX2-16G3600A 8GB

Terabyte Co Ltd RCX2-16G3600A 8GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

Kingston 9905702-082.A00G 8GB

Kingston 9905702-082.A00G 8GB

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

Transcend Information AQD-SD4U16GN21-SE 16GB

Transcend Information AQD-SD4U16GN21-SE 16GB

Samsung M3 78T2863QZS-CF7 1GB

Samsung M3 78T2863QZS-CF7 1GB

OM Nanotech Pvt.Ltd V1D4S816GB2G82G83200 16GB

OM Nanotech Pvt.Ltd V1D4S816GB2G82G83200 16GB

G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F3-10600CL9-2GBNT 2GB

Teikon TMA81GS6CJR8N-VKSC 8GB

Teikon TMA81GS6CJR8N-VKSC 8GB

Samsung M3 78T2953EZ3-CF7 1GB

Samsung M3 78T2953EZ3-CF7 1GB

Kingston KF2666C15S4/8G 8GB

Kingston KF2666C15S4/8G 8GB

G Skill Intl F2-5300CL4-1GBSA 1GB

G Skill Intl F2-5300CL4-1GBSA 1GB

Thermaltake Technology Co Ltd R022D408GX2-4600C19A 8GB

Thermaltake Technology Co Ltd R022D408GX2-4600C19A 8GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Micron Technology 9ASF51272PZ-2G1A2 4GB

Micron Technology 9ASF51272PZ-2G1A2 4GB

Samsung M3 78T5663RZ3-CF7 2GB

Samsung M3 78T5663RZ3-CF7 2GB

Mushkin 99[2/7/4]192[F/T] 4GB

Mushkin 99[2/7/4]192[F/T] 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Team Group Inc. TEAMGROUP-UD4-2800 8GB

Team Group Inc. TEAMGROUP-UD4-2800 8GB

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

G Skill Intl F4-3200C16-16GRS 16GB

G Skill Intl F4-3200C16-16GRS 16GB

Samsung M471A5244CB0-CWE 4GB

Samsung M471A5244CB0-CWE 4GB

Samsung M471A2K43EB1-CWE 16GB

Samsung M471A2K43EB1-CWE 16GB