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Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology BL8G36C16U4W.M8FE1 8GB

Crucial Technology CT51264BA1339.C16F 4GB vs Crucial Technology BL8G36C16U4W.M8FE1 8GB

总分
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Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

总分
star star star star star
Crucial Technology BL8G36C16U4W.M8FE1 8GB

Crucial Technology BL8G36C16U4W.M8FE1 8GB

差异 规格 评论

差异

Crucial Technology CT51264BA1339.C16F 4GB 需要考虑的原因
Crucial Technology CT51264BA1339.C16F 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 30
    左右 10% 更低的延时
Crucial Technology BL8G36C16U4W.M8FE1 8GB 需要考虑的原因
Crucial Technology BL8G36C16U4W.M8FE1 8GB
报告一个错误
  • 更快的读取速度，GB/s
    19.6 left arrow 13.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    15.5 left arrow 8.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology BL8G36C16U4W.M8FE1 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    27 left arrow 30
  • 读取速度，GB/s
    13.9 left arrow 19.6
  • 写入速度，GB/s
    8.4 left arrow 15.5
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 8 9 left arrow PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2251 left arrow 3432

Crucial Technology CT51264BA1339.C16F 4GB RAM的比较

Crucial Technology CT51264BA1339J.C8F 4GB
Crucial Technology CT51264BA1339J.M8F 4GB

Crucial Technology BL8G36C16U4W.M8FE1 8GB RAM的比较

A-DATA Technology AM2U16BC4P2-B05B 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology BL8G36C16U4W.M8FE1 8GB
Crucial Technology BL8G36C16U4W.M8FE1 8GB
内存RAM
SK Hynix HMT42GR7AFR4A-PB 16GB
SK Hynix HMT42GR7AFR4A-PB 16GB
Samsung M378A1K43EB2-CWE 8GB
Samsung M378A1K43EB2-CWE 8GB
内存RAM
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
A-DATA Technology AO1P32MC8T1-BW3S 8GB
A-DATA Technology AO1P32MC8T1-BW3S 8GB
内存RAM
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Kllisre M471A3243BB0-CP50 16GB
Kllisre M471A3243BB0-CP50 16GB
内存RAM
Samsung M378B1G73EB0-CK0 8GB
Samsung M378B1G73EB0-CK0 8GB
Kingston 9905701-098.A00G 16GB
Kingston 9905701-098.A00G 16GB
内存RAM
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Corsair CMSX64GX4M4A2400C16 16GB
Corsair CMSX64GX4M4A2400C16 16GB
内存RAM
Samsung M471A1K43BB0-CPB 8GB
Samsung M471A1K43BB0-CPB 8GB
Samsung M471A1K43DB1-CWE 8GB
Samsung M471A1K43DB1-CWE 8GB
内存RAM
Kingston 99U5584-005.A00LF 4GB
Kingston 99U5584-005.A00LF 4GB
Transcend Information JM3200HLE-32G 32GB
Transcend Information JM3200HLE-32G 32GB
内存RAM
Kingston ACR512X64D3S13C9G 4GB
Kingston ACR512X64D3S13C9G 4GB
Micron Technology 16ATF2G64HZ-2G6H1 16GB
Micron Technology 16ATF2G64HZ-2G6H1 16GB
内存RAM
A-DATA Technology AM2U16BC4P2-B05B 4GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Avant Technology J642GU42J5213N1 16GB
Avant Technology J642GU42J5213N1 16GB
内存RAM
Samsung M471B5173QH0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
Crucial Technology CB4GU2400.M8E 4GB
Crucial Technology CB4GU2400.M8E 4GB
内存RAM
Kingston 99U5474-010.A00LF 2GB
Kingston 99U5474-010.A00LF 2GB
Crucial Technology CT8G4SFS824A.M8FB 8GB
Crucial Technology CT8G4SFS824A.M8FB 8GB
内存RAM
Kingston K531R8-MIN 4GB
Kingston K531R8-MIN 4GB
Micron Technology 8ATF51264HZ-2G1B1 4GB
Micron Technology 8ATF51264HZ-2G1B1 4GB
内存RAM
Mushkin 991679ES 996679ES 2GB
Mushkin 991679ES 996679ES 2GB
Crucial Technology BLS4G4D240FSB.8FARG? 4GB
Crucial Technology BLS4G4D240FSB.8FARG? 4GB
内存RAM