RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology BLS16G4D32AESB.M16FE 16GB
比较
Crucial Technology CT51264BA1339.C16F 4GB vs Crucial Technology BLS16G4D32AESB.M16FE 16GB
总分
Crucial Technology CT51264BA1339.C16F 4GB
总分
Crucial Technology BLS16G4D32AESB.M16FE 16GB
差异
规格
评论
差异
需要考虑的原因
Crucial Technology CT51264BA1339.C16F 4GB
报告一个错误
低于PassMark测试中的延时,ns
27
29
左右 7% 更低的延时
需要考虑的原因
Crucial Technology BLS16G4D32AESB.M16FE 16GB
报告一个错误
更快的读取速度,GB/s
18.5
13.9
测试中的平均数值
更快的写入速度,GB/s
15.2
8.4
测试中的平均数值
更高的内存带宽,mbps
19200
10600
左右 1.81 更高的带宽
规格
完整的技术规格清单
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology BLS16G4D32AESB.M16FE 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
27
29
读取速度,GB/s
13.9
18.5
写入速度,GB/s
8.4
15.2
内存带宽,mbps
10600
19200
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 8 9
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
时序/时钟速度
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2251
3784
Crucial Technology CT51264BA1339.C16F 4GB RAM的比较
Crucial Technology CT51264BA1339J.C8F 4GB
Crucial Technology CT51264BA1339J.M8F 4GB
Crucial Technology BLS16G4D32AESB.M16FE 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M471B5173QH0-YK0 4GB
Crucial Technology BL8G32C16U4BL.M8FE1 8GB
Avant Technology F6451U64F9333G 4GB
Gold Key Technology Co Ltd GKE800SO102408-3200 8GB
AMD AE34G1601U1 4GB
Essencore Limited KD48GS481-26N1600 8GB
G Skill Intl F3-10600CL9-2GBNT 2GB
Corsair CMSX32GX4M2A3000C18 16GB
Smart Modular SH564128FH8NZQNSCG 4GB
Corsair CMW32GX4M2Z3600C18 16GB
Samsung M395T2863QZ4-CF76 1GB
G Skill Intl F4-3200C14-16GTZDCB 16GB
Kingston 99U5584-001.A00LF 4GB
SK Hynix GKE800SO102408-2400 8GB
Corsair CMY8GX3M2A2666C10 4GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6JJR8N
G Skill Intl F3-2666C12-8GTXD 8GB
G Skill Intl F4-3200C16-16GRS 16GB
AMD AE34G1601U1 4GB
Patriot Memory (PDP Systems) 3200 C16 Series 8GB
Corsair CMY8GX3M2A2666C10 4GB
Samsung M378A1K43BB1-CPB 8GB
Kllisre KRE-D3U1600M/8G 8GB
Corsair CM4X8GF3000C15K4 8GB
Samsung M378B5673EH1-CF8 2GB
Kingston 9965600-005.A00G 16GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Samsung M386A8K40BMB-CPB 64GB
报告一个错误
×
Bug description
Source link