Crucial Technology CT51264BA1339.C16F 4GB vs G Skill Intl F4-4000C18-8GTRG 8GB

总分

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

总分

G Skill Intl F4-4000C18-8GTRG 8GB

G Skill Intl F4-4000C18-8GTRG 8GB

差异规格评论

差异

Crucial Technology CT51264BA1339.C16F 4GB

需要考虑的原因
Crucial Technology CT51264BA1339.C16F 4GB

报告一个错误

低于PassMark测试中的延时，ns

27 29

左右 7% 更低的延时

G Skill Intl F4-4000C18-8GTRG 8GB

需要考虑的原因
G Skill Intl F4-4000C18-8GTRG 8GB

报告一个错误

更快的读取速度，GB/s

19.6 13.9

测试中的平均数值
更快的写入速度，GB/s

17.2 8.4

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT51264BA1339.C16F 4GB

G Skill Intl F4-4000C18-8GTRG 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 29
读取速度，GB/s

13.9 19.6
写入速度，GB/s

8.4 17.2
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2251 4072

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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A-DATA Technology DQVE1908 512MB

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G Skill Intl F4-3000C16-8GTRS 8GB

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Crucial Technology CT51264BD1339.M16F 4GB

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Crucial Technology CT51264BA1339.C16F 4GB

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G Skill Intl F4-4000C18-8GTRG 8GB

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Corsair CMW32GX4M2D3600C18 16GB

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Kingston KHX21334D4/8G 8GB

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Samsung M471B5273DH0-CH9 4GB

EVGA 16G-D4-2800-MR 4GB

EVGA 16G-D4-2800-MR 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

G Skill Intl F4-3200C15-8GTZSW 8GB

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Nanya Technology NT4GC64B8HG0NS-DI 4GB

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Nanya Technology NT4GC64B8HD0NS-CG 4GB

Nanya Technology NT4GC64B8HD0NS-CG 4GB

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Kingston 9905403-134.A00LF 2GB

Samsung M474A4G43MB1-CTD 32GB

Samsung M474A4G43MB1-CTD 32GB