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Crucial Technology CT51264BA1339.C16F 4GB
Hynix Semiconductor (Hyundai Electronics) HMA851S6CJR6N-UH 4GB
比较
Crucial Technology CT51264BA1339.C16F 4GB vs Hynix Semiconductor (Hyundai Electronics) HMA851S6CJR6N-UH 4GB
总分
Crucial Technology CT51264BA1339.C16F 4GB
总分
Hynix Semiconductor (Hyundai Electronics) HMA851S6CJR6N-UH 4GB
差异
规格
评论
差异
需要考虑的原因
Crucial Technology CT51264BA1339.C16F 4GB
报告一个错误
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA851S6CJR6N-UH 4GB
报告一个错误
低于PassMark测试中的延时,ns
26
27
左右 -4% 更低的延时
更快的读取速度,GB/s
15.6
13.9
测试中的平均数值
更快的写入速度,GB/s
11.8
8.4
测试中的平均数值
更高的内存带宽,mbps
19200
10600
左右 1.81 更高的带宽
规格
完整的技术规格清单
Crucial Technology CT51264BA1339.C16F 4GB
Hynix Semiconductor (Hyundai Electronics) HMA851S6CJR6N-UH 4GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
27
26
读取速度,GB/s
13.9
15.6
写入速度,GB/s
8.4
11.8
内存带宽,mbps
10600
19200
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 8 9
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2251
2382
Crucial Technology CT51264BA1339.C16F 4GB RAM的比较
Crucial Technology CT51264BA1339J.C8F 4GB
Crucial Technology CT51264BA1339J.M8F 4GB
Hynix Semiconductor (Hyundai Electronics) HMA851S6CJR6N-UH 4GB RAM的比较
Samsung M393B2G70BH0-CH9 16GB
Kingston 9905403-156.A00LF 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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报告一个错误
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