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Crucial Technology CT51264BA1339.C16F 4GB
Micron Technology 36ASF4G72PZ-2G1A1 32GB

Crucial Technology CT51264BA1339.C16F 4GB vs Micron Technology 36ASF4G72PZ-2G1A1 32GB

总分
star star star star star
Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

总分
star star star star star
Micron Technology 36ASF4G72PZ-2G1A1 32GB

Micron Technology 36ASF4G72PZ-2G1A1 32GB

差异 规格 评论

差异

Crucial Technology CT51264BA1339.C16F 4GB 需要考虑的原因
Crucial Technology CT51264BA1339.C16F 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 37
    左右 27% 更低的延时
  • 更快的读取速度，GB/s
    13.9 left arrow 9.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    8.4 left arrow 7.8
    测试中的平均数值
Micron Technology 36ASF4G72PZ-2G1A1 32GB 需要考虑的原因
Micron Technology 36ASF4G72PZ-2G1A1 32GB
报告一个错误
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Crucial Technology CT51264BA1339.C16F 4GB
Micron Technology 36ASF4G72PZ-2G1A1 32GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    27 left arrow 37
  • 读取速度，GB/s
    13.9 left arrow 9.6
  • 写入速度，GB/s
    8.4 left arrow 7.8
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2251 left arrow 2082

Crucial Technology CT51264BA1339.C16F 4GB RAM的比较

Crucial Technology CT51264BA1339J.C8F 4GB
Crucial Technology CT51264BA1339J.M8F 4GB

Micron Technology 36ASF4G72PZ-2G1A1 32GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

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内存RAM
Crucial Technology CT51264BA1339.C16F 4GB
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Micron Technology 36ASF4G72PZ-2G1A1 32GB
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