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Crucial Technology CT51264BA1339.C16F 4GB
Micron Technology 4ATF51264AZ-2G6E1 4GB
比较
Crucial Technology CT51264BA1339.C16F 4GB vs Micron Technology 4ATF51264AZ-2G6E1 4GB
总分
Crucial Technology CT51264BA1339.C16F 4GB
总分
Micron Technology 4ATF51264AZ-2G6E1 4GB
差异
规格
评论
差异
需要考虑的原因
Crucial Technology CT51264BA1339.C16F 4GB
报告一个错误
低于PassMark测试中的延时,ns
27
34
左右 21% 更低的延时
需要考虑的原因
Micron Technology 4ATF51264AZ-2G6E1 4GB
报告一个错误
更快的读取速度,GB/s
16.4
13.9
测试中的平均数值
更快的写入速度,GB/s
12.1
8.4
测试中的平均数值
更高的内存带宽,mbps
21300
10600
左右 2.01 更高的带宽
规格
完整的技术规格清单
Crucial Technology CT51264BA1339.C16F 4GB
Micron Technology 4ATF51264AZ-2G6E1 4GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
27
34
读取速度,GB/s
13.9
16.4
写入速度,GB/s
8.4
12.1
内存带宽,mbps
10600
21300
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 8 9
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度
7-7-7-20 / 1333 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
2251
2616
Crucial Technology CT51264BA1339.C16F 4GB RAM的比较
Crucial Technology CT51264BA1339J.C8F 4GB
Crucial Technology CT51264BA1339J.M8F 4GB
Micron Technology 4ATF51264AZ-2G6E1 4GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
TwinMOS 8DPT5MK8-TATP 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
G Skill Intl F2-8500CL5-2GBPI 2GB
Shenzhen Xingmem Technology Corp 16GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
SK Hynix HMA84GL7AFR4N-UH 32GB
Kingston KHX2400C11D3/4GX 4GB
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Kingston KHX2133C11D3/4GX 4GB
Kingston 9905700-025.A00G 8GB
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Essencore Limited IM48GU88N26-FFFHMZ 8GB
Crucial Technology CT51264BA1339.C16F 4GB
Micron Technology 4ATF51264AZ-2G6E1 4GB
Crucial Technology CT102464BF160B.C16 8GB
Micron Technology 16ATF2G64HZ-2G3E1 16GB
Kingston 99U5403-465.A00LF 8GB
Corsair CM4X8GF2666C16K8 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Kingston KY7N41-MID 8GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Patriot Memory (PDP Systems) 2666 C15 Series 4GB
Samsung M471B5173DB0-YK0 4GB
Patriot Memory (PDP Systems) 3000 C15 Series 8GB
A-DATA Technology AD73I1C1674EV 4GB
Ramaxel Technology RMSA3300MH78HBF-2666 16GB
Samsung M471B5273EB0-CK0 4GB
Boya Microelectronics Inc. AM52SE24G64AP-SQ 32GB
Samsung M471B5673FH0-CF8 2GB
Kingston 9905630-030.A00G 16GB
报告一个错误
×
Bug description
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