Crucial Technology CT51264BA1339.D16F 4GB vs Corsair CMK16GX4M2C3200C16 8GB

总分

Crucial Technology CT51264BA1339.D16F 4GB

Crucial Technology CT51264BA1339.D16F 4GB

总分

Corsair CMK16GX4M2C3200C16 8GB

Corsair CMK16GX4M2C3200C16 8GB

差异规格评论

差异

Crucial Technology CT51264BA1339.D16F 4GB

需要考虑的原因
Crucial Technology CT51264BA1339.D16F 4GB

报告一个错误

Corsair CMK16GX4M2C3200C16 8GB

需要考虑的原因
Corsair CMK16GX4M2C3200C16 8GB

报告一个错误

低于PassMark测试中的延时，ns

20 39

左右 -95% 更低的延时
更快的读取速度，GB/s

21 13.2

测试中的平均数值
更快的写入速度，GB/s

17.5 8.2

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT51264BA1339.D16F 4GB

Corsair CMK16GX4M2C3200C16 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

39 20
读取速度，GB/s

13.2 21.0
写入速度，GB/s

8.2 17.5
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2165 3619

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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A-DATA Technology DDR3 1600 4GB

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G Skill Intl F4-2800C15-8GRBB 8GB

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Kingston XK2M26-MIE-NX 16GB

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Samsung M378B5673EH1-CF8 2GB

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Apacer Technology GD2.2229BH.001 16GB

Ramos Technology RMB4GB58BCA3-13HC 4GB

Ramos Technology RMB4GB58BCA3-13HC 4GB

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Micron Technology 16ATF2G64HZ-2G1A1 16GB

Kingston 9905471-002.A00LF 2GB

Kingston 9905471-002.A00LF 2GB

Corsair CMK32GX4M4B3866C18 8GB

Corsair CMK32GX4M4B3866C18 8GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Micron Technology 8ATF1G64AZ-2G6B1 8GB

Micron Technology 8ATF1G64AZ-2G6B1 8GB

Kingmax Semiconductor FLFE85F-C8KL9 2GB

Kingmax Semiconductor FLFE85F-C8KL9 2GB

Apacer Technology 78.CAGMR.ARC0B 8GB

Apacer Technology 78.CAGMR.ARC0B 8GB