Crucial Technology CT51264BA1339.D16F 4GB vs Corsair CMWX8GD3600C18W4 8GB

总分

Crucial Technology CT51264BA1339.D16F 4GB

Crucial Technology CT51264BA1339.D16F 4GB

总分

Corsair CMWX8GD3600C18W4 8GB

Corsair CMWX8GD3600C18W4 8GB

差异规格评论

差异

Crucial Technology CT51264BA1339.D16F 4GB

需要考虑的原因
Crucial Technology CT51264BA1339.D16F 4GB

报告一个错误

Corsair CMWX8GD3600C18W4 8GB

需要考虑的原因
Corsair CMWX8GD3600C18W4 8GB

报告一个错误

低于PassMark测试中的延时，ns

19 39

左右 -105% 更低的延时
更快的读取速度，GB/s

20.4 13.2

测试中的平均数值
更快的写入速度，GB/s

17.8 8.2

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT51264BA1339.D16F 4GB

Corsair CMWX8GD3600C18W4 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

39 19
读取速度，GB/s

13.2 20.4
写入速度，GB/s

8.2 17.8
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2165 3855

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M471B5273CH0-CH9 4GB

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Chun Well Technology Holding Limited CL16-18-18 D4-3200

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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Elpida EBJ81UG8BBU0-GN-F 8GB