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Crucial Technology CT51264BA1339.D16F 4GB
Corsair CMWX8GD3600C18W4 8GB

Crucial Technology CT51264BA1339.D16F 4GB vs Corsair CMWX8GD3600C18W4 8GB

总分
star star star star star
Crucial Technology CT51264BA1339.D16F 4GB

Crucial Technology CT51264BA1339.D16F 4GB

总分
star star star star star
Corsair CMWX8GD3600C18W4 8GB

Corsair CMWX8GD3600C18W4 8GB

差异 规格 评论

差异

Crucial Technology CT51264BA1339.D16F 4GB 需要考虑的原因
Crucial Technology CT51264BA1339.D16F 4GB
报告一个错误
Corsair CMWX8GD3600C18W4 8GB 需要考虑的原因
Corsair CMWX8GD3600C18W4 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    19 left arrow 39
    左右 -105% 更低的延时
  • 更快的读取速度，GB/s
    20.4 left arrow 13.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    17.8 left arrow 8.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Crucial Technology CT51264BA1339.D16F 4GB
Corsair CMWX8GD3600C18W4 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    39 left arrow 19
  • 读取速度，GB/s
    13.2 left arrow 20.4
  • 写入速度，GB/s
    8.2 left arrow 17.8
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 left arrow PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2165 left arrow 3855

Crucial Technology CT51264BA1339.D16F 4GB RAM的比较

Samsung M378B5773DH0-CH9 2GB
Crucial Technology CT25664BA160B.C8FE 2GB

Corsair CMWX8GD3600C18W4 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M378B5673EH1-CF8 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
Corsair CMY16GX3M4A2133C8 4GB
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内存RAM
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Ramos Technology RMB4GB58BCA3-13HC 4GB
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内存RAM
Samsung M378B5773DH0-CH9 2GB
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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