RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Crucial Technology CT51264BA1339.D16F 4GB
G Skill Intl F4-3800C14-16GTZN 16GB
比较
Crucial Technology CT51264BA1339.D16F 4GB vs G Skill Intl F4-3800C14-16GTZN 16GB
总分
Crucial Technology CT51264BA1339.D16F 4GB
总分
G Skill Intl F4-3800C14-16GTZN 16GB
差异
规格
评论
差异
需要考虑的原因
Crucial Technology CT51264BA1339.D16F 4GB
报告一个错误
需要考虑的原因
G Skill Intl F4-3800C14-16GTZN 16GB
报告一个错误
低于PassMark测试中的延时,ns
30
39
左右 -30% 更低的延时
更快的读取速度,GB/s
21.7
13.2
测试中的平均数值
更快的写入速度,GB/s
16.6
8.2
测试中的平均数值
更高的内存带宽,mbps
17000
10600
左右 1.6 更高的带宽
规格
完整的技术规格清单
Crucial Technology CT51264BA1339.D16F 4GB
G Skill Intl F4-3800C14-16GTZN 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
39
30
读取速度,GB/s
13.2
21.7
写入速度,GB/s
8.2
16.6
内存带宽,mbps
10600
17000
Other
描述
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2165
3806
Crucial Technology CT51264BA1339.D16F 4GB RAM的比较
Samsung M378B5773DH0-CH9 2GB
Crucial Technology CT25664BA160B.C8FE 2GB
G Skill Intl F4-3800C14-16GTZN 16GB RAM的比较
Kreton Corporation 51624xxxx68x35xxxx 2GB
Samsung M386B4G70DM0-CMA4 32GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M4 70T5663QZ3-CF7 2GB
Kingston KVR800/4G 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Gloway International Co. Ltd. YCT4S2666D19081C 8GB
Crucial Technology CT51264BA1339.D16F 4GB
G Skill Intl F4-3800C14-16GTZN 16GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Corsair CMR32GX4M2C3000C16 16GB
Kingston 9905403-515.A00LF 8GB
Ramsta Ramsta-2666MHz-4G 4GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16G
Kingston 99U5429-014.A00LF 4GB
Kingston KTD3KX-HYA 8GB
Samsung M471B5273EB0-CK0 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N
Kingston 9905403-090.A01LF 4GB
Crucial Technology BLS8G4D26BFSB.16FD2 8GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
AMD R748G2133U2S-UO 8GB
Samsung M393B1G70BH0-CK0 8GB
Kingston CBD24D4S7D8MA-16 16GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Patriot Memory (PDP Systems) PSD416G24002S 16GB
Kingston KHX1600C9S3L/4G 4GB
Micron Technology 8G2666CL19 8GB
Kingston ACR256X64D3S1333C9 2GB
EVGA 16G-D4-2400-MR 8GB
报告一个错误
×
Bug description
Source link