Crucial Technology CT51264BA1339.D16F 4GB vs Kingston 9905630-025.A00G 8GB

总分

Crucial Technology CT51264BA1339.D16F 4GB

Crucial Technology CT51264BA1339.D16F 4GB

总分

Kingston 9905630-025.A00G 8GB

Kingston 9905630-025.A00G 8GB

差异规格评论

差异

Crucial Technology CT51264BA1339.D16F 4GB

需要考虑的原因
Crucial Technology CT51264BA1339.D16F 4GB

报告一个错误

Kingston 9905630-025.A00G 8GB

需要考虑的原因
Kingston 9905630-025.A00G 8GB

报告一个错误

低于PassMark测试中的延时，ns

24 39

左右 -63% 更低的延时
更快的读取速度，GB/s

15.4 13.2

测试中的平均数值
更快的写入速度，GB/s

10.1 8.2

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT51264BA1339.D16F 4GB

Kingston 9905630-025.A00G 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

39 24
读取速度，GB/s

13.2 15.4
写入速度，GB/s

8.2 10.1
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2165 2504

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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OCMEMORY OCM2933CL16-16GBH 16GB

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SK Hynix HMT325S6CFR8C-PB 2GB

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SK Hynix HMA82GU6DJR8N-XN 16GB

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A-DATA Technology ADOVE1A0834E 1GB

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Kingston 9905471-002.A00LF 2GB

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Kingston X74R9W-MIE 8GB

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SanMax Technologies Inc. SMD4-U8G48ME-26V 8GB

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Samsung DDR3 8GB 1600MHz 8GB

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G Skill Intl F4-3200C16-16GTRG 16GB

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Samsung M393B2G70BH0-CH9 16GB

Corsair CMK64GX4M2D3000C16 32GB

Corsair CMK64GX4M2D3000C16 32GB

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

Kingston KHX2133C14/16G 16GB

Kingston KHX2133C14/16G 16GB

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Team Group Inc. TEAMGROUP-SD3-1333 8GB

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Corsair CMD8GX4M2B3466C18 4GB

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Samsung M395T2863QZ4-CF76 1GB

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