RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
Micron Technology 16KTF51264HZ-1G6M1 4GB
SK Hynix HMT351S6EFR8C-PB 4GB

Micron Technology 16KTF51264HZ-1G6M1 4GB vs SK Hynix HMT351S6EFR8C-PB 4GB

总分
star star star star star
Micron Technology 16KTF51264HZ-1G6M1 4GB

Micron Technology 16KTF51264HZ-1G6M1 4GB

总分
star star star star star
SK Hynix HMT351S6EFR8C-PB 4GB

SK Hynix HMT351S6EFR8C-PB 4GB

差异 规格 评论

差异

Micron Technology 16KTF51264HZ-1G6M1 4GB 需要考虑的原因
Micron Technology 16KTF51264HZ-1G6M1 4GB
报告一个错误
SK Hynix HMT351S6EFR8C-PB 4GB 需要考虑的原因
SK Hynix HMT351S6EFR8C-PB 4GB
报告一个错误
  • 更快的读取速度，GB/s
    12.5 left arrow 10.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    8.8 left arrow 6.9
    测试中的平均数值

规格

完整的技术规格清单
Micron Technology 16KTF51264HZ-1G6M1 4GB
SK Hynix HMT351S6EFR8C-PB 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR3
  • PassMark中的延时，ns
    43 left arrow 43
  • 读取速度，GB/s
    10.6 left arrow 12.5
  • 写入速度，GB/s
    6.9 left arrow 8.8
  • 内存带宽，mbps
    12800 left arrow 12800
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 9-9-9-24 / 1600 MHz
  • 排名PassMark (越多越好)
    1647 left arrow 1993

Micron Technology 16KTF51264HZ-1G6M1 4GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Essencore Limited KD4AGU880-36A180C 16GB

SK Hynix HMT351S6EFR8C-PB 4GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) HMT351S6EFR8C-PB 4GB
AMD R538G1601U2S 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Micron Technology 16KTF51264HZ-1G6M1 4GB
Micron Technology 16KTF51264HZ-1G6M1 4GB
SK Hynix HMT351S6EFR8C-PB 4GB
SK Hynix HMT351S6EFR8C-PB 4GB
内存RAM
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Wilk Elektronik S.A. IRP4000D4V64L18S/8G 8GB
Wilk Elektronik S.A. IRP4000D4V64L18S/8G 8GB
内存RAM
Samsung M393B2G70BH0-CH9 16GB
Samsung M393B2G70BH0-CH9 16GB
A-DATA Technology AO2P26KC8T1-BXGSHC 8GB
A-DATA Technology AO2P26KC8T1-BXGSHC 8GB
内存RAM
Kingston 99U5474-010.A00LF 2GB
Kingston 99U5474-010.A00LF 2GB
Wilk Elektronik S.A. GY2400D464L15/8G 8GB
Wilk Elektronik S.A. GY2400D464L15/8G 8GB
内存RAM
TwinMOS 8DHE3MN8-HATP 2GB
TwinMOS 8DHE3MN8-HATP 2GB
Hoodisk Electronics Co Ltd GKE400UD51208-2400AH 4GB
Hoodisk Electronics Co Ltd GKE400UD51208-2400AH 4GB
内存RAM
Samsung M471B5173QH0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
Corsair CMU32GX4M2C3000C16 16GB
Corsair CMU32GX4M2C3000C16 16GB
内存RAM
SK Hynix HMT41GS6AFR8A-PB 8GB
SK Hynix HMT41GS6AFR8A-PB 8GB
Wilk Elektronik S.A. IRX3000D464L16/16G 16GB
Wilk Elektronik S.A. IRX3000D464L16/16G 16GB
内存RAM
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Ramaxel Technology RMSA3300MH78HBF-2666 16GB
Ramaxel Technology RMSA3300MH78HBF-2666 16GB
内存RAM
Samsung M393B1G70QH0-YK0 8GB
Samsung M393B1G70QH0-YK0 8GB
Kingston KKN2NM-MIE 4GB
Kingston KKN2NM-MIE 4GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Kingston XF875V-HYA 8GB
Kingston XF875V-HYA 8GB
内存RAM
Samsung M471B5273DH0-CK0 4GB
Samsung M471B5273DH0-CK0 4GB
Kingston 9905702-150.A00G 8GB
Kingston 9905702-150.A00G 8GB
内存RAM
Kingston 9905458-017.A01LF 4GB
Kingston 9905458-017.A01LF 4GB
Team Group Inc. TEAMGROUP-SD4-2400 16GB
Team Group Inc. TEAMGROUP-SD4-2400 16GB
内存RAM
Smart Modular SG564568FG8N6KF-Z2 2GB
Smart Modular SG564568FG8N6KF-Z2 2GB
SK Hynix HMAA4GU6MJR8N-VK 32GB
SK Hynix HMAA4GU6MJR8N-VK 32GB
内存RAM
Samsung M393B1K70CH0-YH9 8GB
Samsung M393B1K70CH0-YH9 8GB
G Skill Intl F4-3333C16-8GTZKW 8GB
G Skill Intl F4-3333C16-8GTZKW 8GB
内存RAM