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Crucial Technology CT51264BA1339.D16F 4GB
Kingston HP37D4U1S8ME-16XR 16GB

Crucial Technology CT51264BA1339.D16F 4GB vs Kingston HP37D4U1S8ME-16XR 16GB

总分
star star star star star
Crucial Technology CT51264BA1339.D16F 4GB

Crucial Technology CT51264BA1339.D16F 4GB

总分
star star star star star
Kingston HP37D4U1S8ME-16XR 16GB

Kingston HP37D4U1S8ME-16XR 16GB

差异 规格 评论

差异

Crucial Technology CT51264BA1339.D16F 4GB 需要考虑的原因
Crucial Technology CT51264BA1339.D16F 4GB
报告一个错误
Kingston HP37D4U1S8ME-16XR 16GB 需要考虑的原因
Kingston HP37D4U1S8ME-16XR 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    34 left arrow 39
    左右 -15% 更低的延时
  • 更快的读取速度，GB/s
    19.2 left arrow 13.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.9 left arrow 8.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 10600
    左右 2.42 更高的带宽

规格

完整的技术规格清单
Crucial Technology CT51264BA1339.D16F 4GB
Kingston HP37D4U1S8ME-16XR 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    39 left arrow 34
  • 读取速度，GB/s
    13.2 left arrow 19.2
  • 写入速度，GB/s
    8.2 left arrow 14.9
  • 内存带宽，mbps
    10600 left arrow 25600
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    2165 left arrow 3527

Crucial Technology CT51264BA1339.D16F 4GB RAM的比较

Samsung M378B5773DH0-CH9 2GB
Crucial Technology CT25664BA160B.C8FE 2GB

Kingston HP37D4U1S8ME-16XR 16GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
Crucial Technology CT51264BA1339.D16F 4GB
Crucial Technology CT51264BA1339.D16F 4GB
Kingston HP37D4U1S8ME-16XR 16GB
Kingston HP37D4U1S8ME-16XR 16GB
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内存RAM
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内存RAM
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内存RAM
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Kingston M378A1K43CB2-CRC 8GB
内存RAM
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Kingston KHX2133C11D3/4GX 4GB
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内存RAM