RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
Crucial Technology CT51264BA1339.D16F 4GB
V-GEN D4S4GL32A16TS 4GB

Crucial Technology CT51264BA1339.D16F 4GB vs V-GEN D4S4GL32A16TS 4GB

总分
star star star star star
Crucial Technology CT51264BA1339.D16F 4GB

Crucial Technology CT51264BA1339.D16F 4GB

总分
star star star star star
V-GEN D4S4GL32A16TS 4GB

V-GEN D4S4GL32A16TS 4GB

差异 规格 评论

差异

Crucial Technology CT51264BA1339.D16F 4GB 需要考虑的原因
Crucial Technology CT51264BA1339.D16F 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    39 left arrow 62
    左右 37% 更低的延时
  • 更快的写入速度，GB/s
    8.2 left arrow 7.4
    测试中的平均数值
V-GEN D4S4GL32A16TS 4GB 需要考虑的原因
V-GEN D4S4GL32A16TS 4GB
报告一个错误
  • 更快的读取速度，GB/s
    15.9 left arrow 13.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
Crucial Technology CT51264BA1339.D16F 4GB
V-GEN D4S4GL32A16TS 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    39 left arrow 62
  • 读取速度，GB/s
    13.2 left arrow 15.9
  • 写入速度，GB/s
    8.2 left arrow 7.4
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2165 left arrow 1891

Crucial Technology CT51264BA1339.D16F 4GB RAM的比较

Samsung M378B5773DH0-CH9 2GB
Crucial Technology CT25664BA160B.C8FE 2GB

V-GEN D4S4GL32A16TS 4GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Smart Modular SH564128FH8NZQNSCG 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
Corsair CMSO16GX4M2A2133C15 8GB
Corsair CMSO16GX4M2A2133C15 8GB
内存RAM
Golden Empire 1GB DDR2 800 CAS=4 1GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Micron Technology 16ATF2G64HZ-2G6H1 16GB
Micron Technology 16ATF2G64HZ-2G6H1 16GB
内存RAM
Crucial Technology CT51264BA1339.D16F 4GB
Crucial Technology CT51264BA1339.D16F 4GB
V-GEN D4S4GL32A16TS 4GB
V-GEN D4S4GL32A16TS 4GB
内存RAM
Kingston 9905469-143.A00LF 4GB
Kingston 9905469-143.A00LF 4GB
Micron Technology 72ASS8G72LZ-2G6D2 64GB
Micron Technology 72ASS8G72LZ-2G6D2 64GB
内存RAM
Kingston 9905403-011.A03LF 2GB
Kingston 9905403-011.A03LF 2GB
Kingston 99U5700-028.A00G 8GB
Kingston 99U5700-028.A00G 8GB
内存RAM
Kingston 9905403-090.A01LF 4GB
Kingston 9905403-090.A01LF 4GB
Corsair CMV8GX4M1L2400C16 8GB
Corsair CMV8GX4M1L2400C16 8GB
内存RAM
Samsung M378T5663QZ3-CF7 2GB
Samsung M378T5663QZ3-CF7 2GB
Crucial Technology CT8G4SFS6266.M4FB 8GB
Crucial Technology CT8G4SFS6266.M4FB 8GB
内存RAM
Micron Technology 4ATF51264HZ-2G6E1 4GB
Micron Technology 4ATF51264HZ-2G6E1 4GB
Samsung M471A5244CB0-CTD 4GB
Samsung M471A5244CB0-CTD 4GB
内存RAM
Kingston K1N7HK-ELC 2GB
Kingston K1N7HK-ELC 2GB
Corsair CMW16GX4M2C3466C16 8GB
Corsair CMW16GX4M2C3466C16 8GB
内存RAM
Team Group Inc. Vulcan-1600 4GB
Team Group Inc. Vulcan-1600 4GB
Mushkin MR[ABC]4U266GHHF8G 8GB
Mushkin MR[ABC]4U266GHHF8G 8GB
内存RAM
A-DATA Technology DOVF1B163G2G 2GB
A-DATA Technology DOVF1B163G2G 2GB
Crucial Technology CT4G4SFS624A.C4FB 4GB
Crucial Technology CT4G4SFS624A.C4FB 4GB
内存RAM
Kingston 9965525-140.A00LF 8GB
Kingston 9965525-140.A00LF 8GB
G Skill Intl F4-2400C15-16GFX 16GB
G Skill Intl F4-2400C15-16GFX 16GB
内存RAM
TwinMOS 8DHE3MN8-HATP 2GB
TwinMOS 8DHE3MN8-HATP 2GB
Crucial Technology BLS16G4D32AESB.M16FE 16GB
Crucial Technology BLS16G4D32AESB.M16FE 16GB
内存RAM
Samsung M3 78T2953EZ3-CF7 1GB
Samsung M3 78T2953EZ3-CF7 1GB
Crucial Technology CT16G4SFD824A.C16FBD 16GB
Crucial Technology CT16G4SFD824A.C16FBD 16GB
内存RAM