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Crucial Technology CT51264BA1339.D16F 4GB
Wilk Elektronik S.A. GR2133D464L15/8G 8GB
比较
Crucial Technology CT51264BA1339.D16F 4GB vs Wilk Elektronik S.A. GR2133D464L15/8G 8GB
总分
Crucial Technology CT51264BA1339.D16F 4GB
总分
Wilk Elektronik S.A. GR2133D464L15/8G 8GB
差异
规格
评论
差异
需要考虑的原因
Crucial Technology CT51264BA1339.D16F 4GB
报告一个错误
需要考虑的原因
Wilk Elektronik S.A. GR2133D464L15/8G 8GB
报告一个错误
低于PassMark测试中的延时,ns
25
39
左右 -56% 更低的延时
更快的读取速度,GB/s
14.5
13.2
测试中的平均数值
更快的写入速度,GB/s
9.1
8.2
测试中的平均数值
更高的内存带宽,mbps
17000
10600
左右 1.6 更高的带宽
规格
完整的技术规格清单
Crucial Technology CT51264BA1339.D16F 4GB
Wilk Elektronik S.A. GR2133D464L15/8G 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
39
25
读取速度,GB/s
13.2
14.5
写入速度,GB/s
8.2
9.1
内存带宽,mbps
10600
17000
Other
描述
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2165
2368
Crucial Technology CT51264BA1339.D16F 4GB RAM的比较
Samsung M378B5773DH0-CH9 2GB
Crucial Technology CT25664BA160B.C8FE 2GB
Wilk Elektronik S.A. GR2133D464L15/8G 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Crucial Technology BL16G26C16U4R.16FE 16GB
Smart Modular SG564568FG8N6KF-Z2 2GB
Corsair CM4B16G7L2666A16K2-O 16GB
Samsung M3 78T3354BZ0-CCC 256MB
Kingston KHX2800C14D4/4GX 4GB
Samsung M378A1K43EB2-CWE 8GB
Micron Technology 16ATF1G64AZ-2G3A2 8GB
Samsung M3 78T5663RZ3-CE6 2GB
Kingston KHX2133C13D4/8GX 8GB
Samsung M471A2K43BB1-CPB 16GB
Samsung M471A2K43BB1-CPB 16GB
报告一个错误
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Bug description
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