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Crucial Technology CT51264BD1339.M16F 4GB
Corsair CMD64GX4M4B2800C14 16GB
比较
Crucial Technology CT51264BD1339.M16F 4GB vs Corsair CMD64GX4M4B2800C14 16GB
总分
Crucial Technology CT51264BD1339.M16F 4GB
总分
Corsair CMD64GX4M4B2800C14 16GB
差异
规格
评论
差异
需要考虑的原因
Crucial Technology CT51264BD1339.M16F 4GB
报告一个错误
需要考虑的原因
Corsair CMD64GX4M4B2800C14 16GB
报告一个错误
更快的读取速度,GB/s
15
12.1
测试中的平均数值
更快的写入速度,GB/s
11.6
8.6
测试中的平均数值
更高的内存带宽,mbps
17000
10600
左右 1.6 更高的带宽
规格
完整的技术规格清单
Crucial Technology CT51264BD1339.M16F 4GB
Corsair CMD64GX4M4B2800C14 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
25
25
读取速度,GB/s
12.1
15.0
写入速度,GB/s
8.6
11.6
内存带宽,mbps
10600
17000
Other
描述
PC3-10600, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10
PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2045
3085
Crucial Technology CT51264BD1339.M16F 4GB RAM的比较
Swissbit SLN04G64E1BQ2SA-DC 4GB
Kingston 9905471-030.A00LF 8GB
Corsair CMD64GX4M4B2800C14 16GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Kingston 9905701-029.A00G 16GB
Kingston 9905471-006.A01LF 4GB
Kingston KHX3000C16/16GX 16GB
Kingston 9905403-156.A00LF 2GB
Micron Technology 18ASF2G72PDZ-2G6H1R 16GB
Kingston 9905469-143.A00LF 4GB
Corsair CMD16GX4M4B3000C15 4GB
Samsung M393B5270CH0-CH9 4GB
Team Group Inc. TEAMGROUP-UD4-4000 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kingston 9905711-035.A00G 8GB
Kingston 9905403-061.A00LF 2GB
A-DATA Technology DDR4 3300 2OZ 4GB
Samsung M393B1G70BH0-CK0 8GB
Teikon TMA451S6AFR8N-TFSC 4GB
Kingmax Semiconductor KLDD48F-B8KU5 1GB
DSL Memory D4SS1G081SH24A-A 8GB
Samsung M471B5673FH0-CF8 2GB
Corsair CMW16GX4M2Z4000C18 8GB
Kingston 9905403-011.A03LF 2GB
G Skill Intl F4-3333C16-16GVK 16GB
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