Crucial Technology CT51264BD1339.M16F 4GB vs Crucial Technology BL8G30C15U4WL.M8FE1 8GB

总分

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

总分

Crucial Technology BL8G30C15U4WL.M8FE1 8GB

Crucial Technology BL8G30C15U4WL.M8FE1 8GB

差异规格评论

差异

Crucial Technology CT51264BD1339.M16F 4GB

需要考虑的原因
Crucial Technology CT51264BD1339.M16F 4GB

报告一个错误

低于PassMark测试中的延时，ns

25 29

左右 14% 更低的延时

Crucial Technology BL8G30C15U4WL.M8FE1 8GB

需要考虑的原因
Crucial Technology BL8G30C15U4WL.M8FE1 8GB

报告一个错误

更快的读取速度，GB/s

16.8 12.1

测试中的平均数值
更快的写入速度，GB/s

12.4 8.6

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology BL8G30C15U4WL.M8FE1 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 29
读取速度，GB/s

12.1 16.8
写入速度，GB/s

8.6 12.4
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2045 3143

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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最新比较

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G Skill Intl F4-3600C16-8GTESC 8GB

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Crucial Technology BLS8G3N18AES4.16FE 8GB

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G Skill Intl F3-2800C12-8GTXDG 8GB

G Skill Intl F4-3200C16-16GTZRX 16GB

G Skill Intl F4-3200C16-16GTZRX 16GB

Samsung M471B5273DH0-CH9 4GB

Samsung M471B5273DH0-CH9 4GB

Samsung M391A2K43BB1-CRC 16GB

Samsung M391A2K43BB1-CRC 16GB

Samsung M393A1G40DB0-CPB 8GB

Samsung M393A1G40DB0-CPB 8GB

SK Hynix HMA41GR7AFR4N-TF 8GB

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Kingston 9905403-447.A00LF 4GB

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Kingston 9905703-009.A00G 16GB

Kingston 9905703-009.A00G 16GB

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Samsung M378B5273EB0-CK0 4GB

V-Color Technology Inc. TL48G32S8KSRGB16 8GB

V-Color Technology Inc. TL48G32S8KSRGB16 8GB