RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
Crucial Technology CT51264BD1339.M16F 4GB
G Skill Intl F4-3200C15-8GTZSK 8GB

Crucial Technology CT51264BD1339.M16F 4GB vs G Skill Intl F4-3200C15-8GTZSK 8GB

总分
star star star star star
Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

总分
star star star star star
G Skill Intl F4-3200C15-8GTZSK 8GB

G Skill Intl F4-3200C15-8GTZSK 8GB

差异 规格 评论

差异

Crucial Technology CT51264BD1339.M16F 4GB 需要考虑的原因
Crucial Technology CT51264BD1339.M16F 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 26
    左右 4% 更低的延时
G Skill Intl F4-3200C15-8GTZSK 8GB 需要考虑的原因
G Skill Intl F4-3200C15-8GTZSK 8GB
报告一个错误
  • 更快的读取速度，GB/s
    18.9 left arrow 12.1
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.9 left arrow 8.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Crucial Technology CT51264BD1339.M16F 4GB
G Skill Intl F4-3200C15-8GTZSK 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    25 left arrow 26
  • 读取速度，GB/s
    12.1 left arrow 18.9
  • 写入速度，GB/s
    8.6 left arrow 13.9
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2045 left arrow 3437

Crucial Technology CT51264BD1339.M16F 4GB RAM的比较

Swissbit SLN04G64E1BQ2SA-DC 4GB
Kingston 9905471-030.A00LF 8GB

G Skill Intl F4-3200C15-8GTZSK 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M393B1K70QB0-CK0 8GB
Samsung M393B1K70QB0-CK0 8GB
Kingston XJ69DF-HYA 8GB
Kingston XJ69DF-HYA 8GB
内存RAM
SK Hynix HMT41GU7BFR8A-PB 8GB
SK Hynix HMT41GU7BFR8A-PB 8GB
Smart Modular SF4641G8CK8IEHLSBG 8GB
Smart Modular SF4641G8CK8IEHLSBG 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kingston 9905711-035.A00G 8GB
Kingston 9905711-035.A00G 8GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
Crucial Technology BL16G36C16U4RL.M8FB1 16GB
Crucial Technology BL16G36C16U4RL.M8FB1 16GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
G Skill Intl F4-3600C16-8GVK 8GB
G Skill Intl F4-3600C16-8GVK 8GB
内存RAM
Kingston 9905403-437.A01LF 4GB
Kingston 9905403-437.A01LF 4GB
Apacer Technology 78.BAGN8.40C0B 4GB
Apacer Technology 78.BAGN8.40C0B 4GB
内存RAM
Samsung M471B5173DB0-YK0 4GB
Samsung M471B5173DB0-YK0 4GB
G Skill Intl F4-2133C15-8GFX 8GB
G Skill Intl F4-2133C15-8GFX 8GB
内存RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
Apacer Technology 78.CAGP7.C7C0B 8GB
Apacer Technology 78.CAGP7.C7C0B 8GB
内存RAM
SK Hynix HYMP31GF72CMP4D5Y5 8GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Kingston KCRXJ6-HYJ 16GB
Kingston KCRXJ6-HYJ 16GB
内存RAM
AMD R538G1601U2S-UO 8GB
AMD R538G1601U2S-UO 8GB
G Skill Intl F4-3000C14-8GTZR 8GB
G Skill Intl F4-3000C14-8GTZR 8GB
内存RAM
Corsair VSA2GSDS667C4 2GB
Corsair VSA2GSDS667C4 2GB
Crucial Technology CT8G4SFD8213.C16FBD2 8GB
Crucial Technology CT8G4SFD8213.C16FBD2 8GB
内存RAM
Nanya Technology M2Y51264TU88B0B-3C 512MB
Nanya Technology M2Y51264TU88B0B-3C 512MB
A-DATA Technology AO1P24HC4N2-BYNS 4GB
A-DATA Technology AO1P24HC4N2-BYNS 4GB
内存RAM
Samsung M393B5270CH0-CH9 4GB
Samsung M393B5270CH0-CH9 4GB
Kingston 9905744-066.A00G 32GB
Kingston 9905744-066.A00G 32GB
内存RAM
Samsung M471B5673FH0-CH9 2GB
Samsung M471B5673FH0-CH9 2GB
Essencore Limited IM48GU48N28-GGGHM 8GB
Essencore Limited IM48GU48N28-GGGHM 8GB
内存RAM