Crucial Technology CT51264BD1339.M16F 4GB vs G Skill Intl F4-4133C19-8GTZKKF 8GB

总分

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

总分

G Skill Intl F4-4133C19-8GTZKKF 8GB

G Skill Intl F4-4133C19-8GTZKKF 8GB

差异规格评论

差异

Crucial Technology CT51264BD1339.M16F 4GB

需要考虑的原因
Crucial Technology CT51264BD1339.M16F 4GB

报告一个错误

低于PassMark测试中的延时，ns

25 30

左右 17% 更低的延时

G Skill Intl F4-4133C19-8GTZKKF 8GB

需要考虑的原因
G Skill Intl F4-4133C19-8GTZKKF 8GB

报告一个错误

更快的读取速度，GB/s

21.4 12.1

测试中的平均数值
更快的写入速度，GB/s

17.8 8.6

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT51264BD1339.M16F 4GB

G Skill Intl F4-4133C19-8GTZKKF 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 30
读取速度，GB/s

12.1 21.4
写入速度，GB/s

8.6 17.8
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2045 4156

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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Corsair CMT64GX4M2C3600C18 32GB

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Crucial Technology CT51264BD1339.M16F 4GB

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G Skill Intl F4-4133C19-8GTZKKF 8GB

G Skill Intl F4-4133C19-8GTZKKF 8GB

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Corsair CML16GX3M2A1600C10 8GB

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Micron Technology 8ATF2G64HZ-3G2E2 16GB

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Apacer Technology 78.CAGPW.40C0B 8GB

Apacer Technology 78.CAGPW.40C0B 8GB

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

Kingston KHX2666C13/8GX 8GB

Kingston KHX2666C13/8GX 8GB

Micron Technology 8JSF25664HZ-1G4D1 2GB

Micron Technology 8JSF25664HZ-1G4D1 2GB

G Skill Intl F4-3000C16-8GISB 8GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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Shenzhen Xingmem Technology Corp KRE-D4U2400M/8G 8GB

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Kingston 9905458-017.A01LF 4GB

Kingston 9905700-017.A00G 8GB

Kingston 9905700-017.A00G 8GB