Crucial Technology CT51264BD1339.M16F 4GB vs G Skill Intl F4-4400C17-16GTZR 16GB

总分

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

总分

G Skill Intl F4-4400C17-16GTZR 16GB

G Skill Intl F4-4400C17-16GTZR 16GB

差异规格评论

差异

Crucial Technology CT51264BD1339.M16F 4GB

需要考虑的原因
Crucial Technology CT51264BD1339.M16F 4GB

报告一个错误

G Skill Intl F4-4400C17-16GTZR 16GB

需要考虑的原因
G Skill Intl F4-4400C17-16GTZR 16GB

报告一个错误

低于PassMark测试中的延时，ns

22 25

左右 -14% 更低的延时
更快的读取速度，GB/s

20.2 12.1

测试中的平均数值
更快的写入速度，GB/s

17.5 8.6

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT51264BD1339.M16F 4GB

G Skill Intl F4-4400C17-16GTZR 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 22
读取速度，GB/s

12.1 20.2
写入速度，GB/s

8.6 17.5
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2045 4014

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology TEAMGROUP-UD4-3000 16GB

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Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

G Skill Intl F4-4266C17-16GTZRB 16GB

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Micron Technology 8ATF2G64HZ-3G2E2 16GB

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Corsair CM4X16GD3200C16K2E 16GB

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Samsung M391B5273CH0-CH9 4GB

Samsung M391B5273CH0-CH9 4GB

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Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C

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Corsair CMD32GX4M2C3466C16W 16GB

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SpecTek Incorporated ?????????????????? 2GB

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SanMax Technologies Inc. SMD4-U16G48HD1-29Y 16GB

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Corsair CMY8GX3M2A2666C10 4GB

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Essencore Limited KD48GU88C-26N1600 8GB

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Crucial Technology CT8G4SFS8266.C8FN 8GB