Micron Technology 8ATF2G64HZ-3G2E2 16GB vs Kingston 9905712-010.A00G 16GB

总分

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

总分

Kingston 9905712-010.A00G 16GB

Kingston 9905712-010.A00G 16GB

差异规格评论

差异

Micron Technology 8ATF2G64HZ-3G2E2 16GB

需要考虑的原因
Micron Technology 8ATF2G64HZ-3G2E2 16GB

报告一个错误

更快的读取速度，GB/s

15.6 12.3

测试中的平均数值
更快的写入速度，GB/s

11.8 10.8

测试中的平均数值
更高的内存带宽，mbps

25600 21300

左右 1.2% 更高的带宽

Kingston 9905712-010.A00G 16GB

需要考虑的原因
Kingston 9905712-010.A00G 16GB

报告一个错误

低于PassMark测试中的延时，ns

28 51

左右 -82% 更低的延时

规格

完整的技术规格清单

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Kingston 9905712-010.A00G 16GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

51 28
读取速度，GB/s

15.6 12.3
写入速度，GB/s

11.8 10.8
内存带宽，mbps

25600 21300

Other

描述

PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

20-20-20, 22-22-22, 24-24-24 / 3200 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2687 2002

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

SK Hynix HYMP112U64CP8-S6 1GB

SK Hynix HYMP112U64CP8-S6 1GB

Crucial Technology BL16G32C16U4B.M16FE1 16GB

Crucial Technology BL16G32C16U4B.M16FE1 16GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB

A-DATA Technology AO2P32NCSV1-BEVS 16GB

A-DATA Technology AO2P32NCSV1-BEVS 16GB

Samsung M393B5270CH0-CH9 4GB

Samsung M393B5270CH0-CH9 4GB

Apacer Technology 78.CAGN4.4020B 8GB

Apacer Technology 78.CAGN4.4020B 8GB

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

G Skill Intl F4-2400C17-4GFX 4GB

G Skill Intl F4-2400C17-4GFX 4GB

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

Avant Technology J641GU42J9266ND 8GB

Avant Technology J641GU42J9266ND 8GB

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

Crucial Technology CT4G4DFS824A.C8FADP 4GB

Crucial Technology CT4G4DFS824A.C8FADP 4GB

Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

Thermaltake Technology Co Ltd R022D408GX2-3200C16A 8GB

Thermaltake Technology Co Ltd R022D408GX2-3200C16A 8GB

Crucial Technology CT25664BA160B.C16F 2GB

Crucial Technology CT25664BA160B.C16F 2GB

G Skill Intl F4-3400C16-16GTZ 16GB

G Skill Intl F4-3400C16-16GTZ 16GB

Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

Apacer Technology 78.DAGNN.4030B 16GB

Apacer Technology 78.DAGNN.4030B 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Micron Technology 8ATF51264AZ-2G1B1 4GB

Micron Technology 8ATF51264AZ-2G1B1 4GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire CL16-16-16 D4-3200 4GB

Golden Empire CL16-16-16 D4-3200 4GB

Samsung M471B5273DH0-CH9 4GB

Samsung M471B5273DH0-CH9 4GB

Samsung M393B5170FH0-CH9 4GB

Samsung M393B5170FH0-CH9 4GB

Micron Technology 8JSF25664HZ-1G4D1 2GB

Micron Technology 8JSF25664HZ-1G4D1 2GB

Kingston HX432C15PB3/16G 16GB

Kingston HX432C15PB3/16G 16GB

Kingston 9905403-174.A00LF 2GB

Kingston 9905403-174.A00LF 2GB

Crucial Technology BL16G36C16U4BL.M8FB1 16GB

Crucial Technology BL16G36C16U4BL.M8FB1 16GB