Crucial Technology CT51264BD1339.M16F 4GB vs Micron Technology 18ASF2G72PDZ-2G6H1R 16GB

总分

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

总分

Micron Technology 18ASF2G72PDZ-2G6H1R 16GB

Micron Technology 18ASF2G72PDZ-2G6H1R 16GB

差异规格评论

差异

Crucial Technology CT51264BD1339.M16F 4GB

需要考虑的原因
Crucial Technology CT51264BD1339.M16F 4GB

报告一个错误

低于PassMark测试中的延时，ns

25 49

左右 49% 更低的延时
更快的读取速度，GB/s

12.1 10.7

测试中的平均数值

Micron Technology 18ASF2G72PDZ-2G6H1R 16GB

需要考虑的原因
Micron Technology 18ASF2G72PDZ-2G6H1R 16GB

报告一个错误

更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT51264BD1339.M16F 4GB

Micron Technology 18ASF2G72PDZ-2G6H1R 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 49
读取速度，GB/s

12.1 10.7
写入速度，GB/s

8.6 8.6
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2045 2504

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Absolute Latency

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