Crucial Technology CT51264BD1339.M16F 4GB vs Samsung M378A2K43BB1-CPB 16GB

总分

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

总分

Samsung M378A2K43BB1-CPB 16GB

Samsung M378A2K43BB1-CPB 16GB

差异规格评论

差异

Crucial Technology CT51264BD1339.M16F 4GB

需要考虑的原因
Crucial Technology CT51264BD1339.M16F 4GB

报告一个错误

低于PassMark测试中的延时，ns

25 35

左右 29% 更低的延时

Samsung M378A2K43BB1-CPB 16GB

需要考虑的原因
Samsung M378A2K43BB1-CPB 16GB

报告一个错误

更快的读取速度，GB/s

14.9 12.1

测试中的平均数值
更快的写入速度，GB/s

10.2 8.6

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT51264BD1339.M16F 4GB

Samsung M378A2K43BB1-CPB 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 35
读取速度，GB/s

12.1 14.9
写入速度，GB/s

8.6 10.2
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2045 2768

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

InnoDisk Corporation M4S0-8GSSOCRG 8GB

InnoDisk Corporation M4S0-8GSSOCRG 8GB

Apacer Technology 78.01G86.9H50C 1GB

Apacer Technology 78.01G86.9H50C 1GB

G Skill Intl F4-2400C17-8GVR 8GB

G Skill Intl F4-2400C17-8GVR 8GB

SK Hynix HMT41GU7BFR8A-PB 8GB

SK Hynix HMT41GU7BFR8A-PB 8GB

Micron Technology 8ATF1G64HZ-2G6E1 8GB

Micron Technology 8ATF1G64HZ-2G6E1 8GB

Nanya Technology M2Y51264TU88B0B-3C 512MB

Nanya Technology M2Y51264TU88B0B-3C 512MB

Samsung V-GeN D4S4GL32A8TL 4GB

Samsung V-GeN D4S4GL32A8TL 4GB

Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

Crucial Technology CT16G4DFD824A.M16FE 16GB

Crucial Technology CT16G4DFD824A.M16FE 16GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8

Kingston ACR24D4S7S8MB-8 8GB

Kingston ACR24D4S7S8MB-8 8GB

Kingston KHX1866C9D3/8GX 8GB

Kingston KHX1866C9D3/8GX 8GB

Corsair CMSX16GX4M2A3200C22 8GB

Corsair CMSX16GX4M2A3200C22 8GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Kingston KHX3333C17D4/4GX 4GB

Kingston KHX3333C17D4/4GX 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Micron Technology 16G3200CL22 16GB

Micron Technology 16G3200CL22 16GB

Ramos Technology RMB4GB58BCA3-13HC 4GB

Ramos Technology RMB4GB58BCA3-13HC 4GB

Gold Key Technology Co Ltd NMSO416E82-3200E 16GB

Gold Key Technology Co Ltd NMSO416E82-3200E 16GB

SK Hynix HMT451U7BFR8C-RD 4GB

SK Hynix HMT451U7BFR8C-RD 4GB

G Skill Intl F4-2666C19-8GVR 8GB

G Skill Intl F4-2666C19-8GVR 8GB

Samsung M378B5273CH0-CH9 4GB

Samsung M378B5273CH0-CH9 4GB

V-Color Technology Inc. TL8G36818D-E6PRSWK 8GB

V-Color Technology Inc. TL8G36818D-E6PRSWK 8GB

Samsung M391B5673FH0-CH9 2GB

Samsung M391B5673FH0-CH9 2GB

Smart Modular SMU4WEC8C1K0464FCG 8GB

Smart Modular SMU4WEC8C1K0464FCG 8GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

Heoriady HX2666DT8G-TD 8GB

Heoriady HX2666DT8G-TD 8GB