Crucial Technology CT51264BD1339.M16F 4GB vs Samsung M386A4G40DM0-CPB 32GB

总分

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

总分

Samsung M386A4G40DM0-CPB 32GB

Samsung M386A4G40DM0-CPB 32GB

差异规格评论

差异

Crucial Technology CT51264BD1339.M16F 4GB

需要考虑的原因
Crucial Technology CT51264BD1339.M16F 4GB

报告一个错误

低于PassMark测试中的延时，ns

25 55

左右 55% 更低的延时
更快的读取速度，GB/s

12.1 9.4

测试中的平均数值
更快的写入速度，GB/s

8.6 7.2

测试中的平均数值

Samsung M386A4G40DM0-CPB 32GB

需要考虑的原因
Samsung M386A4G40DM0-CPB 32GB

报告一个错误

更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT51264BD1339.M16F 4GB

Samsung M386A4G40DM0-CPB 32GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 55
读取速度，GB/s

12.1 9.4
写入速度，GB/s

8.6 7.2
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2045 2117

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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SK Hynix GKE160UD102408-2400 16GB

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Kingston KF3200C20S4/32GX 32MB

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SK Hynix HMAA4GS6AJR8N-XN 32GB

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Micron Technology 4ATF1G64HZ-3G2E2 8GB

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Samsung M3 78T2863QZS-CF7 1GB

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PUSKILL PJ8TFK1GM8 8GB

PUSKILL PJ8TFK1GM8 8GB

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