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Crucial Technology CT51264BD1339.M16F 4GB
Shanghai Kuxin Microelectronics Ltd NMUD480E86-3000 8GB

Crucial Technology CT51264BD1339.M16F 4GB vs Shanghai Kuxin Microelectronics Ltd NMUD480E86-3000 8GB

总分
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Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

总分
star star star star star
Shanghai Kuxin Microelectronics Ltd NMUD480E86-3000 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E86-3000 8GB

差异 规格 评论

差异

Crucial Technology CT51264BD1339.M16F 4GB 需要考虑的原因
Crucial Technology CT51264BD1339.M16F 4GB
报告一个错误
Shanghai Kuxin Microelectronics Ltd NMUD480E86-3000 8GB 需要考虑的原因
Shanghai Kuxin Microelectronics Ltd NMUD480E86-3000 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    18 left arrow 25
    左右 -39% 更低的延时
  • 更快的读取速度，GB/s
    20.2 left arrow 12.1
    测试中的平均数值
  • 更快的写入速度，GB/s
    16.2 left arrow 8.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
Crucial Technology CT51264BD1339.M16F 4GB
Shanghai Kuxin Microelectronics Ltd NMUD480E86-3000 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    25 left arrow 18
  • 读取速度，GB/s
    12.1 left arrow 20.2
  • 写入速度，GB/s
    8.6 left arrow 16.2
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 left arrow PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2045 left arrow 3536

Crucial Technology CT51264BD1339.M16F 4GB RAM的比较

Swissbit SLN04G64E1BQ2SA-DC 4GB
Kingston 9905471-030.A00LF 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E86-3000 8GB RAM的比较

Apacer Technology AQD-D4U8GN24-SE 8GB
Samsung M378B5673EH1-CF8 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

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