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Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
Thermaltake Technology Co Ltd R022D408GX2-4600C19A 8GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB vs Thermaltake Technology Co Ltd R022D408GX2-4600C19A 8GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

总分
star star star star star
Thermaltake Technology Co Ltd R022D408GX2-4600C19A 8GB

Thermaltake Technology Co Ltd R022D408GX2-4600C19A 8GB

差异 规格 评论

差异

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
报告一个错误
Thermaltake Technology Co Ltd R022D408GX2-4600C19A 8GB 需要考虑的原因
Thermaltake Technology Co Ltd R022D408GX2-4600C19A 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 62
    左右 -121% 更低的延时
  • 更快的读取速度，GB/s
    21.6 left arrow 7.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    18.2 left arrow 5.9
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 10600
    左右 2.42 更高的带宽

规格

完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
Thermaltake Technology Co Ltd R022D408GX2-4600C19A 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    62 left arrow 28
  • 读取速度，GB/s
    7.4 left arrow 21.6
  • 写入速度，GB/s
    5.9 left arrow 18.2
  • 内存带宽，mbps
    10600 left arrow 25600
Other
  • 描述
    PC3-10600, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 left arrow PC4-25600, 1.2V, CAS Supported: 13 14 15 16 17 18 19 20 21 22
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    1612 left arrow 3890

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB RAM的比较

Samsung M392B2G70DM0-YH9 16GB
Samsung M393B1K70DH0-CH9 8GB

Thermaltake Technology Co Ltd R022D408GX2-4600C19A 8GB RAM的比较

Apacer Technology AQD-D4U8GN24-SE 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
Corsair CMK16GX4M2D3200C16 8GB
Corsair CMK16GX4M2D3200C16 8GB
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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Kingston KHX3600C18D4/16GX 16GB
Kingston KHX3600C18D4/16GX 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A
Thermaltake Technology Co Ltd R022D408GX2-4600C19A 8GB
Thermaltake Technology Co Ltd R022D408GX2-4600C19A 8GB
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AMD R744G2400U1S 4GB
AMD R744G2400U1S 4GB
Corsair CMK8GX4M2A2666C16 4GB
Corsair CMK8GX4M2A2666C16 4GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Team Group Inc. TEAMGROUP-D4-3733 8GB
Team Group Inc. TEAMGROUP-D4-3733 8GB
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Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
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Gloway International Co. Ltd. TYA4U3000E16081C 8GB
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Samsung M386B4G70DM0-CMA4 32GB
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Good Wealth Technology Ltd. 8GB
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Samsung M471B5673FH0-CF8 2GB
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OM Nanotech Pvt.Ltd V2D4SF32GB2G82G83200 32GB
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Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
AMD R748G2400U2S-UO 8GB
AMD R748G2400U2S-UO 8GB
内存RAM
Samsung M378A1G43DB0-CPB 8GB
Samsung M378A1G43DB0-CPB 8GB
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Kingston 9905702-121.A00G 8GB
内存RAM
A-DATA Technology AM2L16BC4R1-B0AS 4GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
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Transcend Information TS512MLH64V4H 4GB
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Samsung M3 93T5750CZA-CE6 2GB
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G Skill Intl F4-3200C15-16GVK 16GB
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Kingston KVT8FP-HYC 4GB
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Corsair CM4X16GE2666C16K2 16GB
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AMD R538G1601U2S 8GB
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Apacer Technology 78.C1GMM.BAC0B 8GB
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